Impedance analysis of Al2O3/H-terminated diamond metal-oxide-semiconductor structures

Meiyong Liao; Jiangwei Liu; Liwen Sang; David Coathup; Jiangling Li; Masataka Imura; Yasuo Koide; Haitao Ye

doi:10.1063/1.4913597

Impedance analysis of Al₂O₃/H-terminated diamond metal-oxide-semiconductor structures

Meiyong Liao, Jiangwei Liu, Liwen Sang, David Coathup, Jiangling Li, Masataka Imura, Yasuo Koide, Haitao Ye

Research output: Contribution to journal › Article › peer-review

Abstract

Impedance spectroscopy (IS) analysis is carried out to investigate the electrical properties of the metal-oxide-semiconductor (MOS) structure fabricated on hydrogen-terminated single crystal diamond. The low-temperature atomic layer deposition Al₂O₃ is employed as the insulator in the MOS structure. By numerically analysing the impedance of the MOS structure at various biases, the equivalent circuit of the diamond MOS structure is derived, which is composed of two parallel capacitive and resistance pairs, in series connection with both resistance and inductance. The two capacitive components are resulted from the insulator, the hydrogenated-diamond surface, and their interface. The physical parameters such as the insulator capacitance are obtained, circumventing the series resistance and inductance effect. By comparing the IS and capacitance-voltage measurements, the frequency dispersion of the capacitance-voltage characteristic is discussed.

Original language	English
Article number	083506
Number of pages	5
Journal	Applied Physics Letters
Volume	106
Issue number	8
DOIs	https://doi.org/10.1063/1.4913597
Publication status	Published - 23 Feb 2015

Bibliographical note

© 2015 AIP Publishing LLC.

Funding: FP7 Marie Curie Action (300193 and 295208); European Commission; EPSRC (EP/K003070/1), Green Network of Excellence (GRENE), Low-Carbon Research Network (LCnet), and Nanotechnology Platform projects sponsored by the Ministry of Education, Culture, Sports, and Technology (MEXT) in Japan.

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10.1063/1.4913597

Impedance analysis of Al2O3H-terminated diamond metal-oxide-semiconductor structures
© 2015 AIP Publishing LLC.
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title = "Impedance analysis of Al2O3/H-terminated diamond metal-oxide-semiconductor structures",

abstract = "Impedance spectroscopy (IS) analysis is carried out to investigate the electrical properties of the metal-oxide-semiconductor (MOS) structure fabricated on hydrogen-terminated single crystal diamond. The low-temperature atomic layer deposition Al2O3 is employed as the insulator in the MOS structure. By numerically analysing the impedance of the MOS structure at various biases, the equivalent circuit of the diamond MOS structure is derived, which is composed of two parallel capacitive and resistance pairs, in series connection with both resistance and inductance. The two capacitive components are resulted from the insulator, the hydrogenated-diamond surface, and their interface. The physical parameters such as the insulator capacitance are obtained, circumventing the series resistance and inductance effect. By comparing the IS and capacitance-voltage measurements, the frequency dispersion of the capacitance-voltage characteristic is discussed.",

author = "Meiyong Liao and Jiangwei Liu and Liwen Sang and David Coathup and Jiangling Li and Masataka Imura and Yasuo Koide and Haitao Ye",

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AU - Liao, Meiyong

AU - Liu, Jiangwei

AU - Sang, Liwen

AU - Coathup, David

AU - Li, Jiangling

AU - Imura, Masataka

AU - Koide, Yasuo

AU - Ye, Haitao

N1 - © 2015 AIP Publishing LLC. Funding: FP7 Marie Curie Action (300193 and 295208); European Commission; EPSRC (EP/K003070/1), Green Network of Excellence (GRENE), Low-Carbon Research Network (LCnet), and Nanotechnology Platform projects sponsored by the Ministry of Education, Culture, Sports, and Technology (MEXT) in Japan.

PY - 2015/2/23

Y1 - 2015/2/23

N2 - Impedance spectroscopy (IS) analysis is carried out to investigate the electrical properties of the metal-oxide-semiconductor (MOS) structure fabricated on hydrogen-terminated single crystal diamond. The low-temperature atomic layer deposition Al2O3 is employed as the insulator in the MOS structure. By numerically analysing the impedance of the MOS structure at various biases, the equivalent circuit of the diamond MOS structure is derived, which is composed of two parallel capacitive and resistance pairs, in series connection with both resistance and inductance. The two capacitive components are resulted from the insulator, the hydrogenated-diamond surface, and their interface. The physical parameters such as the insulator capacitance are obtained, circumventing the series resistance and inductance effect. By comparing the IS and capacitance-voltage measurements, the frequency dispersion of the capacitance-voltage characteristic is discussed.

AB - Impedance spectroscopy (IS) analysis is carried out to investigate the electrical properties of the metal-oxide-semiconductor (MOS) structure fabricated on hydrogen-terminated single crystal diamond. The low-temperature atomic layer deposition Al2O3 is employed as the insulator in the MOS structure. By numerically analysing the impedance of the MOS structure at various biases, the equivalent circuit of the diamond MOS structure is derived, which is composed of two parallel capacitive and resistance pairs, in series connection with both resistance and inductance. The two capacitive components are resulted from the insulator, the hydrogenated-diamond surface, and their interface. The physical parameters such as the insulator capacitance are obtained, circumventing the series resistance and inductance effect. By comparing the IS and capacitance-voltage measurements, the frequency dispersion of the capacitance-voltage characteristic is discussed.

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Impedance analysis of Al₂O₃/H-terminated diamond metal-oxide-semiconductor structures

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