Improved electrical properties of Nd-doped K 0.5 Bi 4.5 Ti 4 O 15 thin films prepared by chemical solution deposition

J. W. Kim, D. Do, C. M. Raghavan, S. S. Kim*

*Corresponding author for this work

Research output: Contribution to journalArticle

Abstract

K 0.5 Bi 4.5 Ti 4 O 15 (KBTi) and K 0.5 Bi 4 Nd 0.5 Ti 4 O 15 (KBNdT) thin films were prepared using a chemical solution deposition. For all samples, layered perovskite structures with a single phase and a good crystalline structure were observed in the X-ray diffraction patterns and the Raman scattering spectra. The microstructures were composed of fine grains without cracks in the scanning electron microscope results. The KBNdT thin film exhibited a better hysteresis loop than the KBTi thin film. For the KBNdT thin film, the remnant polarization (2P r ) was 45 μC/cm 2 and the leakage current density was approximately half an order of magnitude lower than that of the KBTi thin film. In addition, no polarization fatigue was observed in the KBNdT thin film up to 4.44×10 9 switching cycles. Therefore, Nd-doping is an effective method to improve the ferroelectric properties of the KBTi thin film.

Original languageEnglish
Pages (from-to)1111-1116
Number of pages6
JournalCeramics International
Volume40
Issue number1 PART A
Early online date3 Jul 2013
DOIs
Publication statusPublished - 1 Jan 2014

Keywords

  • A. Films
  • B. X-ray methods
  • C. Electrical properties
  • C. Ferroelectric properties

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