Improved electrical properties of Nd-doped K
                        0.5
                        Bi 
                        4.5
                        Ti
                        4
                        O
                        15
                         thin films prepared by chemical solution deposition

J. W. Kim; D. Do; C. M. Raghavan; S. S. Kim

doi:10.1016/j.ceramint.2013.06.111

Improved electrical properties of Nd-doped K _0.5 Bi _4.5 Ti ₄ O ₁₅ thin films prepared by chemical solution deposition

J. W. Kim
, D. Do
, C. M. Raghavan
, S. S. Kim^*

^*Corresponding author for this work

Keimyung University
Changwon National University

Research output: Contribution to journal › Article › peer-review

11 Citations (Scopus)

Abstract

K _0.5 Bi _4.5 Ti ₄ O ₁₅ (KBTi) and K _0.5 Bi ₄ Nd _0.5 Ti ₄ O ₁₅ (KBNdT) thin films were prepared using a chemical solution deposition. For all samples, layered perovskite structures with a single phase and a good crystalline structure were observed in the X-ray diffraction patterns and the Raman scattering spectra. The microstructures were composed of fine grains without cracks in the scanning electron microscope results. The KBNdT thin film exhibited a better hysteresis loop than the KBTi thin film. For the KBNdT thin film, the remnant polarization (2P _r ) was 45 μC/cm ² and the leakage current density was approximately half an order of magnitude lower than that of the KBTi thin film. In addition, no polarization fatigue was observed in the KBNdT thin film up to 4.44×10 ⁹ switching cycles. Therefore, Nd-doping is an effective method to improve the ferroelectric properties of the KBTi thin film.

Original language	English
Pages (from-to)	1111-1116
Number of pages	6
Journal	Ceramics International
Volume	40
Issue number	1 PART A
Early online date	3 Jul 2013
DOIs	https://doi.org/10.1016/j.ceramint.2013.06.111
Publication status	Published - 1 Jan 2014

Funding

This work was supported by the Priority Research Centers Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology ( 2010-0029634 ).

Keywords

A. Films
B. X-ray methods
C. Electrical properties
C. Ferroelectric properties

Access to Document

10.1016/j.ceramint.2013.06.111

Cite this

Kim, J. W., Do, D., Raghavan, C. M., & Kim, S. S. (2014). Improved electrical properties of Nd-doped K _0.5 Bi _4.5 Ti ₄ O ₁₅ thin films prepared by chemical solution deposition. Ceramics International, 40(1 PART A), 1111-1116. https://doi.org/10.1016/j.ceramint.2013.06.111

Kim, J. W. ; Do, D. ; Raghavan, C. M. et al. / Improved electrical properties of Nd-doped K _0.5 Bi _4.5 Ti ₄ O ₁₅ thin films prepared by chemical solution deposition. In: Ceramics International. 2014 ; Vol. 40, No. 1 PART A. pp. 1111-1116.

@article{e60385297734457b8dc184234fd661b6,

title = "Improved electrical properties of Nd-doped K 0.5 Bi 4.5 Ti 4 O 15 thin films prepared by chemical solution deposition",

abstract = " K 0.5 Bi 4.5 Ti 4 O 15 (KBTi) and K 0.5 Bi 4 Nd 0.5 Ti 4 O 15 (KBNdT) thin films were prepared using a chemical solution deposition. For all samples, layered perovskite structures with a single phase and a good crystalline structure were observed in the X-ray diffraction patterns and the Raman scattering spectra. The microstructures were composed of fine grains without cracks in the scanning electron microscope results. The KBNdT thin film exhibited a better hysteresis loop than the KBTi thin film. For the KBNdT thin film, the remnant polarization (2P r ) was 45 μC/cm 2 and the leakage current density was approximately half an order of magnitude lower than that of the KBTi thin film. In addition, no polarization fatigue was observed in the KBNdT thin film up to 4.44×10 9 switching cycles. Therefore, Nd-doping is an effective method to improve the ferroelectric properties of the KBTi thin film.",

keywords = "A. Films, B. X-ray methods, C. Electrical properties, C. Ferroelectric properties",

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language = "English",

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Kim, JW, Do, D, Raghavan, CM & Kim, SS 2014, 'Improved electrical properties of Nd-doped K _0.5 Bi _4.5 Ti ₄ O ₁₅ thin films prepared by chemical solution deposition', Ceramics International, vol. 40, no. 1 PART A, pp. 1111-1116. https://doi.org/10.1016/j.ceramint.2013.06.111

Improved electrical properties of Nd-doped K _0.5 Bi _4.5 Ti ₄ O ₁₅ thin films prepared by chemical solution deposition. / Kim, J. W.; Do, D.; Raghavan, C. M. et al.
In: Ceramics International, Vol. 40, No. 1 PART A, 01.01.2014, p. 1111-1116.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Improved electrical properties of Nd-doped K 0.5 Bi 4.5 Ti 4 O 15 thin films prepared by chemical solution deposition

AU - Kim, J. W.

AU - Do, D.

AU - Raghavan, C. M.

AU - Kim, S. S.

PY - 2014/1/1

Y1 - 2014/1/1

N2 - K 0.5 Bi 4.5 Ti 4 O 15 (KBTi) and K 0.5 Bi 4 Nd 0.5 Ti 4 O 15 (KBNdT) thin films were prepared using a chemical solution deposition. For all samples, layered perovskite structures with a single phase and a good crystalline structure were observed in the X-ray diffraction patterns and the Raman scattering spectra. The microstructures were composed of fine grains without cracks in the scanning electron microscope results. The KBNdT thin film exhibited a better hysteresis loop than the KBTi thin film. For the KBNdT thin film, the remnant polarization (2P r ) was 45 μC/cm 2 and the leakage current density was approximately half an order of magnitude lower than that of the KBTi thin film. In addition, no polarization fatigue was observed in the KBNdT thin film up to 4.44×10 9 switching cycles. Therefore, Nd-doping is an effective method to improve the ferroelectric properties of the KBTi thin film.

AB - K 0.5 Bi 4.5 Ti 4 O 15 (KBTi) and K 0.5 Bi 4 Nd 0.5 Ti 4 O 15 (KBNdT) thin films were prepared using a chemical solution deposition. For all samples, layered perovskite structures with a single phase and a good crystalline structure were observed in the X-ray diffraction patterns and the Raman scattering spectra. The microstructures were composed of fine grains without cracks in the scanning electron microscope results. The KBNdT thin film exhibited a better hysteresis loop than the KBTi thin film. For the KBNdT thin film, the remnant polarization (2P r ) was 45 μC/cm 2 and the leakage current density was approximately half an order of magnitude lower than that of the KBTi thin film. In addition, no polarization fatigue was observed in the KBNdT thin film up to 4.44×10 9 switching cycles. Therefore, Nd-doping is an effective method to improve the ferroelectric properties of the KBTi thin film.

KW - A. Films

KW - B. X-ray methods

KW - C. Electrical properties

KW - C. Ferroelectric properties

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JO - Ceramics International

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IS - 1 PART A

ER -

Kim JW, Do D, Raghavan CM, Kim SS. Improved electrical properties of Nd-doped K _0.5 Bi _4.5 Ti ₄ O ₁₅ thin films prepared by chemical solution deposition. Ceramics International. 2014 Jan 1;40(1 PART A):1111-1116. Epub 2013 Jul 3. doi: 10.1016/j.ceramint.2013.06.111