In-situ monitoring of laser annealing by micro-Raman spectroscopy for hydrogenated silicon nanoparticles produced in radio frequency glow discharge

D. Hill*, T. Jawhari, J. García Cespedes, J. Alvarez García, E. Bertran

*Corresponding author for this work

Research output: Contribution to journalArticle

Abstract

Low temperature Plasma Enhanced Chemical Vapour Deposition (PECVD) grown amorphous hydrogenated Si (a-Si: H) thin films form the basis of many photovoltaic and microelectronic devices such as solar cells and TFTs. Amorphous hydrogenated silicon in the form of nanoparticles has been produced by power modulation of the PECVD processes. The stability of these nanoparticles under high temperatures and high power illumination is therefore of interest and to this end we report on combined laser annealing and in-situ monitoring through the use of micro-raman spectroscopy. Interpretation of spectra is done with the help of complementary techniques including scanning (SEM) and transmission electron microscopy (TEM).

Original languageEnglish
Pages (from-to)1296-1300
Number of pages5
JournalPhysica Status Solidi (A) Applications and Materials Science
Volume203
Issue number6
DOIs
Publication statusPublished - 1 May 2006

Fingerprint

laser annealing
Glow discharges
Silicon
Plasma enhanced chemical vapor deposition
glow discharges
Raman spectroscopy
radio frequencies
vapor deposition
Annealing
Nanoparticles
nanoparticles
Lasers
Monitoring
silicon
cold plasmas
Amorphous silicon
microelectronics
Microelectronics
amorphous silicon
Solar cells

Cite this

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title = "In-situ monitoring of laser annealing by micro-Raman spectroscopy for hydrogenated silicon nanoparticles produced in radio frequency glow discharge",
abstract = "Low temperature Plasma Enhanced Chemical Vapour Deposition (PECVD) grown amorphous hydrogenated Si (a-Si: H) thin films form the basis of many photovoltaic and microelectronic devices such as solar cells and TFTs. Amorphous hydrogenated silicon in the form of nanoparticles has been produced by power modulation of the PECVD processes. The stability of these nanoparticles under high temperatures and high power illumination is therefore of interest and to this end we report on combined laser annealing and in-situ monitoring through the use of micro-raman spectroscopy. Interpretation of spectra is done with the help of complementary techniques including scanning (SEM) and transmission electron microscopy (TEM).",
author = "D. Hill and T. Jawhari and Cespedes, {J. Garc{\'i}a} and Garc{\'i}a, {J. Alvarez} and E. Bertran",
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journal = "Physica Status Solidi A",
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}

In-situ monitoring of laser annealing by micro-Raman spectroscopy for hydrogenated silicon nanoparticles produced in radio frequency glow discharge. / Hill, D.; Jawhari, T.; Cespedes, J. García; García, J. Alvarez; Bertran, E.

In: Physica Status Solidi (A) Applications and Materials Science, Vol. 203, No. 6, 01.05.2006, p. 1296-1300.

Research output: Contribution to journalArticle

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T1 - In-situ monitoring of laser annealing by micro-Raman spectroscopy for hydrogenated silicon nanoparticles produced in radio frequency glow discharge

AU - Hill, D.

AU - Jawhari, T.

AU - Cespedes, J. García

AU - García, J. Alvarez

AU - Bertran, E.

PY - 2006/5/1

Y1 - 2006/5/1

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AB - Low temperature Plasma Enhanced Chemical Vapour Deposition (PECVD) grown amorphous hydrogenated Si (a-Si: H) thin films form the basis of many photovoltaic and microelectronic devices such as solar cells and TFTs. Amorphous hydrogenated silicon in the form of nanoparticles has been produced by power modulation of the PECVD processes. The stability of these nanoparticles under high temperatures and high power illumination is therefore of interest and to this end we report on combined laser annealing and in-situ monitoring through the use of micro-raman spectroscopy. Interpretation of spectra is done with the help of complementary techniques including scanning (SEM) and transmission electron microscopy (TEM).

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