Incorporation of Ga metalorganic precursors during transients at the start of GaAs growth in CBE

D. Hill*, T. Farrell, T. J. Bullough

*Corresponding author for this work

Research output: Contribution to journalArticle

Abstract

We have used normal incidence reflectivity and reflection anisotropy spectroscopy (RAS) to study the initial period of chemical beam epitaxy (CBE) growth of GaAs using either triethylgallium (TEGa) or trimethylgallium (TMGa) as group III precursors. With TEGa as the precursor, a transitory period, which can last for tens of seconds depending on the III/V ratio, is observed in both R and RAS before normal growth is established. With TMGa there is no transitory period evident in the R measurements for any III/V ratio and only a short transitory period exists in the RA measurements. These results are discussed in terms of the formation of a metallic-like surface addlayer, which subsequently becomes incorporated when using TEGa, in marked contrast to the self-limiting behaviour when using TMGa.

Original languageEnglish
Pages (from-to)554-557
Number of pages4
JournalThin Solid Films
Volume343-344
Issue number1-2
DOIs
Publication statusPublished - 1 Jan 1999

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Chemical beam epitaxy
epitaxy
anisotropy
Anisotropy
Spectroscopy
spectroscopy
incidence
reflectance
gallium arsenide

Keywords

  • Chemical beam epitaxy
  • Optical monitoring
  • Reflectance anisotropy
  • Transients

Cite this

Hill, D. ; Farrell, T. ; Bullough, T. J. / Incorporation of Ga metalorganic precursors during transients at the start of GaAs growth in CBE. In: Thin Solid Films. 1999 ; Vol. 343-344, No. 1-2. pp. 554-557.
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Incorporation of Ga metalorganic precursors during transients at the start of GaAs growth in CBE. / Hill, D.; Farrell, T.; Bullough, T. J.

In: Thin Solid Films, Vol. 343-344, No. 1-2, 01.01.1999, p. 554-557.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Incorporation of Ga metalorganic precursors during transients at the start of GaAs growth in CBE

AU - Hill, D.

AU - Farrell, T.

AU - Bullough, T. J.

PY - 1999/1/1

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N2 - We have used normal incidence reflectivity and reflection anisotropy spectroscopy (RAS) to study the initial period of chemical beam epitaxy (CBE) growth of GaAs using either triethylgallium (TEGa) or trimethylgallium (TMGa) as group III precursors. With TEGa as the precursor, a transitory period, which can last for tens of seconds depending on the III/V ratio, is observed in both R and RAS before normal growth is established. With TMGa there is no transitory period evident in the R measurements for any III/V ratio and only a short transitory period exists in the RA measurements. These results are discussed in terms of the formation of a metallic-like surface addlayer, which subsequently becomes incorporated when using TEGa, in marked contrast to the self-limiting behaviour when using TMGa.

AB - We have used normal incidence reflectivity and reflection anisotropy spectroscopy (RAS) to study the initial period of chemical beam epitaxy (CBE) growth of GaAs using either triethylgallium (TEGa) or trimethylgallium (TMGa) as group III precursors. With TEGa as the precursor, a transitory period, which can last for tens of seconds depending on the III/V ratio, is observed in both R and RAS before normal growth is established. With TMGa there is no transitory period evident in the R measurements for any III/V ratio and only a short transitory period exists in the RA measurements. These results are discussed in terms of the formation of a metallic-like surface addlayer, which subsequently becomes incorporated when using TEGa, in marked contrast to the self-limiting behaviour when using TMGa.

KW - Chemical beam epitaxy

KW - Optical monitoring

KW - Reflectance anisotropy

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