Influence of the axicon characteristics and beam propagation parameter M-2 on the formation of Bessel beams from semiconductor lasers

We study the peculiarities of the formation of Bessel beams in semiconductor lasers with a high propagation parameter M2. It is shown that the propagation distance of the Bessel beam is determined by the divergence of the quasi-Gaussian beam with high M2 rather than the geometric parameters of the optical scheme. It is demonstrated that technologically inevitable rounding of the axicon tip leads to a significant increase in the transverse dimension of the central part of the Bessel beam near the axicon.