InGaN/GaN Laser Diodes and their Applications

Scott Watson, Steffan Gwyn, Shaun Viola, Thomas J. Slight, Szymon Stanczyk, Szymon Grzanka, Amit Yadav, Duncan Rowe, Leslie Laycock, Kevin E. Docherty, Edik U. Rafailov, Piotr Perlin, Stephen P. Najda, Mike Leszczyński, Anthony Kelly

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Gallium nitride (GaN) laser diodes are becoming popular sources not only for lighting but for applications ranging from communications to quantum. This paper presents the use of a commercial, off-the-shelf laser diode, with an emission wavelength of 450 nm, for visible light communication, both in free space and for underwater scenarios. Data rates up to 15 Gbit/s have been achieved by making use of orthogonal frequency division multiplexing (OFDM). In addition, distributed feedback (DFB) lasers have been realised emitting at a single wavelength which lend themselves towards applications where high spectral purity is crucial such as atomic clocks or filtered free space transmission systems. These devices have the grating structure etched into the sidewall of the ridge and work is ongoing to measure the linewidth of these lasers with the intended application of cooling Sr+ ions.
Original languageEnglish
Title of host publication2018 20th International Conference on Transparent Optical Networks (ICTON)
PublisherIEEE
ISBN (Electronic)978-1-5386-6605-0
ISBN (Print)978-1-5386-6606-7
DOIs
Publication statusPublished - 27 Sep 2018
Event20th Anniversary International Conference on Transparent Optical Networks (ICTON 2018) - Library of University Politehnica Bucharest, Bucharest, Romania
Duration: 1 Jul 20185 Sep 2018
http://icton2018.upb.ro/

Publication series

Name2018 20th International Conference on Transparent Optical Networks (ICTON)
PublisherIEEE
ISSN (Electronic)2161-2064

Conference

Conference20th Anniversary International Conference on Transparent Optical Networks (ICTON 2018)
Abbreviated titleICTON 2018
CountryRomania
CityBucharest
Period1/07/185/09/18
Internet address

Fingerprint

gallium nitrides
semiconductor lasers
atomic clocks
frequency division multiplexing
distributed feedback lasers
shelves
wavelengths
illuminating
optical communication
ridges
purity
communication
gratings
cooling
lasers
ions

Bibliographical note

© 2018 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.

Cite this

Watson, S., Gwyn, S., Viola, S., Slight, T. J., Stanczyk, S., Grzanka, S., ... Kelly, A. (2018). InGaN/GaN Laser Diodes and their Applications. In 2018 20th International Conference on Transparent Optical Networks (ICTON) [8473864] (2018 20th International Conference on Transparent Optical Networks (ICTON)). IEEE. https://doi.org/10.1109/ICTON.2018.8473864
Watson, Scott ; Gwyn, Steffan ; Viola, Shaun ; Slight, Thomas J. ; Stanczyk, Szymon ; Grzanka, Szymon ; Yadav, Amit ; Rowe, Duncan ; Laycock, Leslie ; Docherty, Kevin E. ; Rafailov, Edik U. ; Perlin, Piotr ; Najda, Stephen P. ; Leszczyński, Mike ; Kelly, Anthony. / InGaN/GaN Laser Diodes and their Applications. 2018 20th International Conference on Transparent Optical Networks (ICTON). IEEE, 2018. (2018 20th International Conference on Transparent Optical Networks (ICTON)).
@inproceedings{bd25f77808724206b33030e5d4d87838,
title = "InGaN/GaN Laser Diodes and their Applications",
abstract = "Gallium nitride (GaN) laser diodes are becoming popular sources not only for lighting but for applications ranging from communications to quantum. This paper presents the use of a commercial, off-the-shelf laser diode, with an emission wavelength of 450 nm, for visible light communication, both in free space and for underwater scenarios. Data rates up to 15 Gbit/s have been achieved by making use of orthogonal frequency division multiplexing (OFDM). In addition, distributed feedback (DFB) lasers have been realised emitting at a single wavelength which lend themselves towards applications where high spectral purity is crucial such as atomic clocks or filtered free space transmission systems. These devices have the grating structure etched into the sidewall of the ridge and work is ongoing to measure the linewidth of these lasers with the intended application of cooling Sr+ ions.",
author = "Scott Watson and Steffan Gwyn and Shaun Viola and Slight, {Thomas J.} and Szymon Stanczyk and Szymon Grzanka and Amit Yadav and Duncan Rowe and Leslie Laycock and Docherty, {Kevin E.} and Rafailov, {Edik U.} and Piotr Perlin and Najda, {Stephen P.} and Mike Leszczyński and Anthony Kelly",
note = "{\circledC} 2018 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.",
year = "2018",
month = "9",
day = "27",
doi = "10.1109/ICTON.2018.8473864",
language = "English",
isbn = "978-1-5386-6606-7",
series = "2018 20th International Conference on Transparent Optical Networks (ICTON)",
publisher = "IEEE",
booktitle = "2018 20th International Conference on Transparent Optical Networks (ICTON)",
address = "United States",

}

Watson, S, Gwyn, S, Viola, S, Slight, TJ, Stanczyk, S, Grzanka, S, Yadav, A, Rowe, D, Laycock, L, Docherty, KE, Rafailov, EU, Perlin, P, Najda, SP, Leszczyński, M & Kelly, A 2018, InGaN/GaN Laser Diodes and their Applications. in 2018 20th International Conference on Transparent Optical Networks (ICTON)., 8473864, 2018 20th International Conference on Transparent Optical Networks (ICTON), IEEE, 20th Anniversary International Conference on Transparent Optical Networks (ICTON 2018), Bucharest, Romania, 1/07/18. https://doi.org/10.1109/ICTON.2018.8473864

InGaN/GaN Laser Diodes and their Applications. / Watson, Scott; Gwyn, Steffan; Viola, Shaun; Slight, Thomas J.; Stanczyk, Szymon; Grzanka, Szymon; Yadav, Amit; Rowe, Duncan; Laycock, Leslie; Docherty, Kevin E.; Rafailov, Edik U.; Perlin, Piotr; Najda, Stephen P.; Leszczyński, Mike; Kelly, Anthony.

2018 20th International Conference on Transparent Optical Networks (ICTON). IEEE, 2018. 8473864 (2018 20th International Conference on Transparent Optical Networks (ICTON)).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

TY - GEN

T1 - InGaN/GaN Laser Diodes and their Applications

AU - Watson, Scott

AU - Gwyn, Steffan

AU - Viola, Shaun

AU - Slight, Thomas J.

AU - Stanczyk, Szymon

AU - Grzanka, Szymon

AU - Yadav, Amit

AU - Rowe, Duncan

AU - Laycock, Leslie

AU - Docherty, Kevin E.

AU - Rafailov, Edik U.

AU - Perlin, Piotr

AU - Najda, Stephen P.

AU - Leszczyński, Mike

AU - Kelly, Anthony

N1 - © 2018 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.

PY - 2018/9/27

Y1 - 2018/9/27

N2 - Gallium nitride (GaN) laser diodes are becoming popular sources not only for lighting but for applications ranging from communications to quantum. This paper presents the use of a commercial, off-the-shelf laser diode, with an emission wavelength of 450 nm, for visible light communication, both in free space and for underwater scenarios. Data rates up to 15 Gbit/s have been achieved by making use of orthogonal frequency division multiplexing (OFDM). In addition, distributed feedback (DFB) lasers have been realised emitting at a single wavelength which lend themselves towards applications where high spectral purity is crucial such as atomic clocks or filtered free space transmission systems. These devices have the grating structure etched into the sidewall of the ridge and work is ongoing to measure the linewidth of these lasers with the intended application of cooling Sr+ ions.

AB - Gallium nitride (GaN) laser diodes are becoming popular sources not only for lighting but for applications ranging from communications to quantum. This paper presents the use of a commercial, off-the-shelf laser diode, with an emission wavelength of 450 nm, for visible light communication, both in free space and for underwater scenarios. Data rates up to 15 Gbit/s have been achieved by making use of orthogonal frequency division multiplexing (OFDM). In addition, distributed feedback (DFB) lasers have been realised emitting at a single wavelength which lend themselves towards applications where high spectral purity is crucial such as atomic clocks or filtered free space transmission systems. These devices have the grating structure etched into the sidewall of the ridge and work is ongoing to measure the linewidth of these lasers with the intended application of cooling Sr+ ions.

UR - https://ieeexplore.ieee.org/document/8473864

U2 - 10.1109/ICTON.2018.8473864

DO - 10.1109/ICTON.2018.8473864

M3 - Conference contribution

SN - 978-1-5386-6606-7

T3 - 2018 20th International Conference on Transparent Optical Networks (ICTON)

BT - 2018 20th International Conference on Transparent Optical Networks (ICTON)

PB - IEEE

ER -

Watson S, Gwyn S, Viola S, Slight TJ, Stanczyk S, Grzanka S et al. InGaN/GaN Laser Diodes and their Applications. In 2018 20th International Conference on Transparent Optical Networks (ICTON). IEEE. 2018. 8473864. (2018 20th International Conference on Transparent Optical Networks (ICTON)). https://doi.org/10.1109/ICTON.2018.8473864