InGaN/GaN Laser Diodes with High Order Notched Gratings

Thomas J. Slight; Amit Yadav; Opeoluwa Odedina; Wyn Meredith; Kevin E. Docherty; Edik Rafailov; Anthony E. Kelly

doi:10.1109/LPT.2017.2759903

InGaN/GaN Laser Diodes with High Order Notched Gratings

Thomas J. Slight
, Amit Yadav
, Opeoluwa Odedina
, Wyn Meredith
, Kevin E. Docherty
, Edik Rafailov
, Anthony E. Kelly

Aston Institute of Photonic Technologies (AiPT)

Compound Semiconductor Technologies Global Ltd
University of Glasgow
Kelvin Nanotechnology Ltd

Research output: Contribution to journal › Article › peer-review

16 Citations (Scopus)

186 Downloads (Pure)

Abstract

We report on InGaN/GaN distributed feedback laser diodes with high order gratings emitting at a single wavelength around 428 nm. The 39th order notched gratings have the advantage of a simplified fabrication route with no need for overgrowth. The laser ridge and grating were formed by electron beam lithography followed by ICP etching. The as-cleaved lasers emitted in the pulsed regime with a peak single-mode output power of 15 mW. Optimization of the grating design should lead to higher power single wavelength operation.

Original language	English
Pages (from-to)	2020-2022
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	29
Issue number	3
Early online date	5 Oct 2017
DOIs	https://doi.org/10.1109/LPT.2017.2759903
Publication status	Published - 1 Dec 2017

Bibliographical note

Copyright: IEEE

Keywords

Distributed feedback laser diodes
GaN
InGaN
Lateral grating
Notched grating
Semiconductor lasers
Sidewall grating
Slotted laser

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10.1109/LPT.2017.2759903

InGaNGaN Laser Diodes with High Order Notched Gratings
Copyright: IEEE
Accepted author manuscript, 335 KB

Cite this

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title = "InGaN/GaN Laser Diodes with High Order Notched Gratings",

abstract = "We report on InGaN/GaN distributed feedback laser diodes with high order gratings emitting at a single wavelength around 428 nm. The 39th order notched gratings have the advantage of a simplified fabrication route with no need for overgrowth. The laser ridge and grating were formed by electron beam lithography followed by ICP etching. The as-cleaved lasers emitted in the pulsed regime with a peak single-mode output power of 15 mW. Optimization of the grating design should lead to higher power single wavelength operation.",

keywords = "Distributed feedback laser diodes, GaN, InGaN, Lateral grating, Notched grating, Semiconductor lasers, Sidewall grating, Slotted laser",

author = "Slight, \{Thomas J.\} and Amit Yadav and Opeoluwa Odedina and Wyn Meredith and Docherty, \{Kevin E.\} and Edik Rafailov and Kelly, \{Anthony E.\}",

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doi = "10.1109/LPT.2017.2759903",

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AU - Slight, Thomas J.

AU - Yadav, Amit

AU - Odedina, Opeoluwa

AU - Meredith, Wyn

AU - Docherty, Kevin E.

AU - Rafailov, Edik

AU - Kelly, Anthony E.

N1 - Copyright: IEEE

PY - 2017/12/1

Y1 - 2017/12/1

N2 - We report on InGaN/GaN distributed feedback laser diodes with high order gratings emitting at a single wavelength around 428 nm. The 39th order notched gratings have the advantage of a simplified fabrication route with no need for overgrowth. The laser ridge and grating were formed by electron beam lithography followed by ICP etching. The as-cleaved lasers emitted in the pulsed regime with a peak single-mode output power of 15 mW. Optimization of the grating design should lead to higher power single wavelength operation.

AB - We report on InGaN/GaN distributed feedback laser diodes with high order gratings emitting at a single wavelength around 428 nm. The 39th order notched gratings have the advantage of a simplified fabrication route with no need for overgrowth. The laser ridge and grating were formed by electron beam lithography followed by ICP etching. The as-cleaved lasers emitted in the pulsed regime with a peak single-mode output power of 15 mW. Optimization of the grating design should lead to higher power single wavelength operation.

KW - Distributed feedback laser diodes

KW - GaN

KW - InGaN

KW - Lateral grating

KW - Notched grating

KW - Semiconductor lasers

KW - Sidewall grating

KW - Slotted laser

UR - https://www.scopus.com/pages/publications/85030790970

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DO - 10.1109/LPT.2017.2759903

M3 - Article

AN - SCOPUS:85030790970

SN - 1041-1135

VL - 29

SP - 2020

EP - 2022

JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

IS - 3

ER -

InGaN/GaN Laser Diodes with High Order Notched Gratings

Abstract

Bibliographical note

Keywords

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