Abstract
Single crystal platelets of AlN were successfully grown on 6H-SiC(0001) by a novel technique designed to suppress SiC decomposition, promote two-dimensional growth, and eliminate cracking in the AlN. X-ray diffractometry and synchrotron white beam X-ray topography demonstrate that the final AlN single crystal is of high structural quality.
| Original language | English |
|---|---|
| Pages (from-to) | 757-762 |
| Number of pages | 6 |
| Journal | Physica Status Solidi A |
| Volume | 188 |
| Issue number | 2 |
| Early online date | 23 Nov 2001 |
| DOIs | |
| Publication status | Published - Dec 2001 |
Keywords
- 61.10.Nz
- 68.37.Hk
- Hk; 68.37.Ps
- 81.05.Ea
- 81.15.Gh
- S7.14
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