InP/InGaP quantum-dot SESAM mode-locked Alexandrite laser

Edik U. Rafailov, Andrey B. Krysa, Arkady Major, Shirin Ghanbari, Ksenia A. Fedorova, W. Andrew Clarkson (Editor), Ramesh K. Shori (Editor)

Research output: Chapter in Book/Report/Conference proceedingConference publication

Abstract

A semiconductor saturable absorber mirror (SESAM) passively mode-locked Alexandrite laser was demonstrated. Using an InP/InGaP quantum-dot saturable absorber mirror, pulse duration of 420 fs at 774 nm was obtained. The laser was pumped at 532 nm and generated 325 mW of average output power in mode-locked regime with a pump power of 7.12 W. To the best of our knowledge, this is the first report of a passively mode-locked Alexandrite laser using SESAM in general and quantum-dot SESAM in particular.
Original languageEnglish
Title of host publication Solid State Lasers XXVII: Technology and Devices
PublisherSPIE
Pages44
DOIs
Publication statusPublished - 15 Feb 2018
EventSolid State Lasers XXVII: Technology and Devices - San Francisco, United States
Duration: 27 Jan 20181 Feb 2018

Conference

ConferenceSolid State Lasers XXVII: Technology and Devices
Period27/01/181/02/18

Bibliographical note

Copyright 2018 Society of Photo-Optical Instrumentation Engineers (SPIE). One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper are prohibited.

Funding: Natural Sciences and Engineering Research Council of Canada, the Canadian Foundation for Innovation and the University of Manitoba

Keywords

  • Infrared and far-infrared lasers; pulsed lasers; tunable lasers; mode-locked lasers; ultrafast lasers

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  • Cite this

    Rafailov, E. U., Krysa, A. B., Major, A., Ghanbari, S., Fedorova, K. A., Clarkson, W. A. (Ed.), & Shori, R. K. (Ed.) (2018). InP/InGaP quantum-dot SESAM mode-locked Alexandrite laser. In Solid State Lasers XXVII: Technology and Devices (pp. 44). SPIE. https://doi.org/10.1117/12.2284480