Internal Quantum Efficiency (IQE) of two-colour monolithic white light emitting diode (LED) was measured by temperature dependant electro-luminescence (TDEL) and analysed with modified rate equation based on ABC model. External, internal and injection efficiencies of blue and green quantum wells were analysed separately. Monolithic white LED contained one green InGaN QW and two blue QWs being separated by GaN barrier. This paper reports also the tunable behaviour of correlated colour temperature (CCT) in pulsed operation mode and effect of self-heating on device performance.
|Title of host publication||Gallium nitride materials and devices IX|
|Editors||Jen-Inn Chyi, Yasushi Nanishi, Hadis Morkoç, Joachim Piprek, Euijoon Yoon, Hiroshi Fujioka|
|Place of Publication||Bellingham, WA (US)|
|Number of pages||8|
|Publication status||Published - 2014|
|Event||Gallium nitride materials and devices IX - San Francisco, CA, United States|
Duration: 3 Feb 2014 → 6 Feb 2014
|Conference||Gallium nitride materials and devices IX|
|City||San Francisco, CA|
|Period||3/02/14 → 6/02/14|
Bibliographical noteIlya E. Titkov ; Amit Yadav ; Vera L. Zerova ; Modestas Zulonas ; Andrey F. Tsatsulnikov ; Wsevolod V. Lundin ; Alexey V. Sakharov and Edik U. Rafailov, "Internal quantum efficiency and tunable colour temperature in monolithic white InGaN/GaN LED", Proc. SPIE 8986, Gallium Nitride Materials and Devices IX, 89862A (March 8, 2014).
Copyright 2014 Society of Photo-Optical Instrumentation Engineers. One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper are prohibited.
Funding: European Union FP7, NEWLED project, Grant number 318388
- internal quantum efficiency
- monolithic white LED
- tunable CCT