Internal quantum efficiency and tunable colour temperature in monolithic white InGaN/GaN LED

Ilya E. Titkov*, Amit Yadav, Vera L. Zerova, Modestas Zulonas, Andrey F. Tsatsulnikov, Wsevolod V. Lundin, Alexey V. Sakharov, Edik U. Rafailov

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference publication

Abstract

Internal Quantum Efficiency (IQE) of two-colour monolithic white light emitting diode (LED) was measured by temperature dependant electro-luminescence (TDEL) and analysed with modified rate equation based on ABC model. External, internal and injection efficiencies of blue and green quantum wells were analysed separately. Monolithic white LED contained one green InGaN QW and two blue QWs being separated by GaN barrier. This paper reports also the tunable behaviour of correlated colour temperature (CCT) in pulsed operation mode and effect of self-heating on device performance.

Original languageEnglish
Title of host publicationGallium nitride materials and devices IX
EditorsJen-Inn Chyi, Yasushi Nanishi, Hadis Morkoç, Joachim Piprek, Euijoon Yoon, Hiroshi Fujioka
Place of PublicationBellingham, WA (US)
PublisherSPIE
Number of pages8
ISBN (Print)978-0-8194-9899-1
DOIs
Publication statusPublished - 2014
EventGallium nitride materials and devices IX - San Francisco, CA, United States
Duration: 3 Feb 20146 Feb 2014

Publication series

NameSPIE proceedings
PublisherSPIE
Volume8986
ISSN (Print)0277-786X

Conference

ConferenceGallium nitride materials and devices IX
CountryUnited States
CitySan Francisco, CA
Period3/02/146/02/14

Bibliographical note

Ilya E. Titkov ; Amit Yadav ; Vera L. Zerova ; Modestas Zulonas ; Andrey F. Tsatsulnikov ; Wsevolod V. Lundin ; Alexey V. Sakharov and Edik U. Rafailov, "Internal quantum efficiency and tunable colour temperature in monolithic white InGaN/GaN LED", Proc. SPIE 8986, Gallium Nitride Materials and Devices IX, 89862A (March 8, 2014).

Copyright 2014 Society of Photo-Optical Instrumentation Engineers. One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper are prohibited.

DOI: http://dx.doi.org/10.1117/12.2040086


Funding: European Union FP7, NEWLED project, Grant number 318388

Keywords

  • internal quantum efficiency
  • monolithic white LED
  • tunable CCT

Fingerprint Dive into the research topics of 'Internal quantum efficiency and tunable colour temperature in monolithic white InGaN/GaN LED'. Together they form a unique fingerprint.

  • Cite this

    Titkov, I. E., Yadav, A., Zerova, V. L., Zulonas, M., Tsatsulnikov, A. F., Lundin, W. V., Sakharov, A. V., & Rafailov, E. U. (2014). Internal quantum efficiency and tunable colour temperature in monolithic white InGaN/GaN LED. In J-I. Chyi, Y. Nanishi, H. Morkoç, J. Piprek, E. Yoon, & H. Fujioka (Eds.), Gallium nitride materials and devices IX [89862A] (SPIE proceedings; Vol. 8986). SPIE. https://doi.org/10.1117/12.2040086