Investigation of the Chromatic Dispersion in Two-Section InAs/GaAs Quantum-Dot Lasers

Yves Bidaux, Ksenia A. Fedorova, Daniil A. Livshits, Edik U. Rafailov, Jerome Faist

Research output: Contribution to journalArticle

Abstract

We present the measurements of the dispersion of InAs/GaAs quantum-dot lasers emitting at 1230 nm (ground state) and 1160 nm (excited state) from the analysis of their subthreshold emission spectra. Measurements from devices with various lengths allow us to deduce that the group velocity dispersion is as high as 2270 fs2mm−1 and is mainly due to the dispersion of bulk GaAs. The gain-induced dispersion varies with the injected current at a rate of ≃−2 fs2 mA−1mm−1, whereas the effect of a saturable absorber on the dispersion is found to be negligible. These results suggest that the implementation of integrated dispersion compensation could significantly reduce the pulse duration of these lasers in mode-locked regime and lead to an enhancement of the formation of optical frequency combs in these devices.
Original languageEnglish
Pages (from-to)2246-2249
JournalIEEE Photonics Technology Letters
Volume29
Issue number24
DOIs
Publication statusPublished - 15 Dec 2017

Bibliographical note

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Funding: Swiss National Science Foundation.

Keywords

  • Semiconductor lasers
  • quantum dots
  • mode locked lasers
  • dispersion curves

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