Abstract
We present the measurements of the dispersion of InAs/GaAs quantum-dot lasers emitting at 1230 nm (ground state) and 1160 nm (excited state) from the analysis of their subthreshold emission spectra. Measurements from devices with various lengths allow us to deduce that the group velocity dispersion is as high as 2270 fs2mm−1 and is mainly due to the dispersion of bulk GaAs. The gain-induced dispersion varies with the injected current at a rate of ≃−2 fs2 mA−1mm−1, whereas the effect of a saturable absorber on the dispersion is found to be negligible. These results suggest that the implementation of integrated dispersion compensation could significantly reduce the pulse duration of these lasers in mode-locked regime and lead to an enhancement of the formation of optical frequency combs in these devices.
| Original language | English |
|---|---|
| Pages (from-to) | 2246-2249 |
| Journal | IEEE Photonics Technology Letters |
| Volume | 29 |
| Issue number | 24 |
| DOIs | |
| Publication status | Published - 15 Dec 2017 |
Bibliographical note
© 2017 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.Funding: Swiss National Science Foundation.
Keywords
- Semiconductor lasers
- quantum dots
- mode locked lasers
- dispersion curves