Abstract
Packaged low polarisation sensitivity InGaAs/InAlAs MQW electroabsorption modulators employing a novel ridged deeply etched buried heterostructure design are described. The feasibility of using them in 160Gbit/s OTDM systems is experimentally assessed.
Original language | English |
---|---|
Pages (from-to) | 2068-2070 |
Number of pages | 3 |
Journal | Electronics letters |
Volume | 33 |
Issue number | 24 |
DOIs | |
Publication status | Published - 1997 |
Bibliographical note
Times Cited: 13Keywords
- electro-optical modulation
- optical communication equipment
- semiconductor quantum wells
- electroabsorption
- digital communication
- indium compounds
- time division multiplexing
- 160 Gbit/s
- optical TDM network
- low polarisation sensitivity