Low polarisation sensitivity electroabsorption modulators for 160Gbit/s networks

D. G. Moodie, P. J. Cannard, A. J. Dann, D. D. Marcenac, C. W. Ford, J. Reed, R. T. Moore, J. K. Lucek, A. D. Ellis

Research output: Contribution to journalArticle

Abstract

Packaged low polarisation sensitivity InGaAs/InAlAs MQW electroabsorption modulators employing a novel ridged deeply etched buried heterostructure design are described. The feasibility of using them in 160Gbit/s OTDM systems is experimentally assessed.
Original languageEnglish
Pages (from-to)2068-2070
Number of pages3
JournalElectronics letters
Volume33
Issue number24
DOIs
Publication statusPublished - 1997

Bibliographical note

Times Cited: 13

Keywords

  • electro-optical modulation
  • optical communication equipment
  • semiconductor quantum wells
  • electroabsorption
  • digital communication
  • indium compounds
  • time division multiplexing
  • 160 Gbit/s
  • optical TDM network
  • low polarisation sensitivity

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    Moodie, D. G., Cannard, P. J., Dann, A. J., Marcenac, D. D., Ford, C. W., Reed, J., Moore, R. T., Lucek, J. K., & Ellis, A. D. (1997). Low polarisation sensitivity electroabsorption modulators for 160Gbit/s networks. Electronics letters, 33(24), 2068-2070. https://doi.org/10.1049/el:19971393