Low polarisation sensitivity electroabsorption modulators for 160Gbit/s networks

D. G. Moodie, P. J. Cannard, A. J. Dann, D. D. Marcenac, C. W. Ford, J. Reed, R. T. Moore, J. K. Lucek, A. D. Ellis

Research output: Contribution to journalArticle

Abstract

Packaged low polarisation sensitivity InGaAs/InAlAs MQW electroabsorption modulators employing a novel ridged deeply etched buried heterostructure design are described. The feasibility of using them in 160Gbit/s OTDM systems is experimentally assessed.
Original languageEnglish
Pages (from-to)2068-2070
Number of pages3
JournalElectronics letters
Volume33
Issue number24
DOIs
Publication statusPublished - 1997

Fingerprint

Electroabsorption modulators
Heterojunctions
Polarization

Bibliographical note

Times Cited: 13

Keywords

  • electro-optical modulation
  • optical communication equipment
  • semiconductor quantum wells
  • electroabsorption
  • digital communication
  • indium compounds
  • time division multiplexing
  • 160 Gbit/s
  • optical TDM network
  • low polarisation sensitivity

Cite this

Moodie, D. G., Cannard, P. J., Dann, A. J., Marcenac, D. D., Ford, C. W., Reed, J., ... Ellis, A. D. (1997). Low polarisation sensitivity electroabsorption modulators for 160Gbit/s networks. Electronics letters, 33(24), 2068-2070. https://doi.org/10.1049/el:19971393
Moodie, D. G. ; Cannard, P. J. ; Dann, A. J. ; Marcenac, D. D. ; Ford, C. W. ; Reed, J. ; Moore, R. T. ; Lucek, J. K. ; Ellis, A. D. / Low polarisation sensitivity electroabsorption modulators for 160Gbit/s networks. In: Electronics letters. 1997 ; Vol. 33, No. 24. pp. 2068-2070.
@article{d97155e3f8c4486ba649b7af367280ba,
title = "Low polarisation sensitivity electroabsorption modulators for 160Gbit/s networks",
abstract = "Packaged low polarisation sensitivity InGaAs/InAlAs MQW electroabsorption modulators employing a novel ridged deeply etched buried heterostructure design are described. The feasibility of using them in 160Gbit/s OTDM systems is experimentally assessed.",
keywords = "electro-optical modulation, optical communication equipment, semiconductor quantum wells, electroabsorption, digital communication, indium compounds, time division multiplexing, 160 Gbit/s, optical TDM network, low polarisation sensitivity",
author = "Moodie, {D. G.} and Cannard, {P. J.} and Dann, {A. J.} and Marcenac, {D. D.} and Ford, {C. W.} and J. Reed and Moore, {R. T.} and Lucek, {J. K.} and Ellis, {A. D.}",
note = "Times Cited: 13",
year = "1997",
doi = "10.1049/el:19971393",
language = "English",
volume = "33",
pages = "2068--2070",
journal = "Electronics letters",
issn = "0013-5194",
publisher = "IET",
number = "24",

}

Moodie, DG, Cannard, PJ, Dann, AJ, Marcenac, DD, Ford, CW, Reed, J, Moore, RT, Lucek, JK & Ellis, AD 1997, 'Low polarisation sensitivity electroabsorption modulators for 160Gbit/s networks', Electronics letters, vol. 33, no. 24, pp. 2068-2070. https://doi.org/10.1049/el:19971393

Low polarisation sensitivity electroabsorption modulators for 160Gbit/s networks. / Moodie, D. G.; Cannard, P. J.; Dann, A. J.; Marcenac, D. D.; Ford, C. W.; Reed, J.; Moore, R. T.; Lucek, J. K.; Ellis, A. D.

In: Electronics letters, Vol. 33, No. 24, 1997, p. 2068-2070.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Low polarisation sensitivity electroabsorption modulators for 160Gbit/s networks

AU - Moodie, D. G.

AU - Cannard, P. J.

AU - Dann, A. J.

AU - Marcenac, D. D.

AU - Ford, C. W.

AU - Reed, J.

AU - Moore, R. T.

AU - Lucek, J. K.

AU - Ellis, A. D.

N1 - Times Cited: 13

PY - 1997

Y1 - 1997

N2 - Packaged low polarisation sensitivity InGaAs/InAlAs MQW electroabsorption modulators employing a novel ridged deeply etched buried heterostructure design are described. The feasibility of using them in 160Gbit/s OTDM systems is experimentally assessed.

AB - Packaged low polarisation sensitivity InGaAs/InAlAs MQW electroabsorption modulators employing a novel ridged deeply etched buried heterostructure design are described. The feasibility of using them in 160Gbit/s OTDM systems is experimentally assessed.

KW - electro-optical modulation

KW - optical communication equipment

KW - semiconductor quantum wells

KW - electroabsorption

KW - digital communication

KW - indium compounds

KW - time division multiplexing

KW - 160 Gbit/s

KW - optical TDM network

KW - low polarisation sensitivity

UR - http://ieeexplore.ieee.org/stamp/stamp.jsp?arnumber=627825

U2 - 10.1049/el:19971393

DO - 10.1049/el:19971393

M3 - Article

VL - 33

SP - 2068

EP - 2070

JO - Electronics letters

JF - Electronics letters

SN - 0013-5194

IS - 24

ER -

Moodie DG, Cannard PJ, Dann AJ, Marcenac DD, Ford CW, Reed J et al. Low polarisation sensitivity electroabsorption modulators for 160Gbit/s networks. Electronics letters. 1997;33(24):2068-2070. https://doi.org/10.1049/el:19971393