Low polarisation sensitivity electroabsorption modulators for 160Gbit/s networks

D. G. Moodie; P. J. Cannard; A. J. Dann; D. D. Marcenac; C. W. Ford; J. Reed; R. T. Moore; J. K. Lucek; A. D. Ellis

doi:10.1049/el:19971393

Low polarisation sensitivity electroabsorption modulators for 160Gbit/s networks

D. G. Moodie
, P. J. Cannard
, A. J. Dann
, D. D. Marcenac
, C. W. Ford
, J. Reed
, R. T. Moore
, J. K. Lucek
, A. D. Ellis

Aston Institute of Photonic Technologies (AiPT)

Research output: Contribution to journal › Article › peer-review

20 Citations (Scopus)

Abstract

Packaged low polarisation sensitivity InGaAs/InAlAs MQW electroabsorption modulators employing a novel ridged deeply etched buried heterostructure design are described. The feasibility of using them in 160Gbit/s OTDM systems is experimentally assessed.

Original language	English
Pages (from-to)	2068-2070
Number of pages	3
Journal	Electronics letters
Volume	33
Issue number	24
DOIs	https://doi.org/10.1049/el:19971393
Publication status	Published - 1997

Bibliographical note

Times Cited: 13

Keywords

electro-optical modulation
optical communication equipment
semiconductor quantum wells
electroabsorption
digital communication
indium compounds
time division multiplexing
160 Gbit/s
optical TDM network
low polarisation sensitivity

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10.1049/el:19971393

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title = "Low polarisation sensitivity electroabsorption modulators for 160Gbit/s networks",

abstract = "Packaged low polarisation sensitivity InGaAs/InAlAs MQW electroabsorption modulators employing a novel ridged deeply etched buried heterostructure design are described. The feasibility of using them in 160Gbit/s OTDM systems is experimentally assessed.",

keywords = "electro-optical modulation, optical communication equipment, semiconductor quantum wells, electroabsorption, digital communication, indium compounds, time division multiplexing, 160 Gbit/s, optical TDM network, low polarisation sensitivity",

author = "Moodie, \{D. G.\} and Cannard, \{P. J.\} and Dann, \{A. J.\} and Marcenac, \{D. D.\} and Ford, \{C. W.\} and J. Reed and Moore, \{R. T.\} and Lucek, \{J. K.\} and Ellis, \{A. D.\}",

note = "Times Cited: 13",

year = "1997",

doi = "10.1049/el:19971393",

language = "English",

volume = "33",

pages = "2068--2070",

journal = "Electronics letters",

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T1 - Low polarisation sensitivity electroabsorption modulators for 160Gbit/s networks

AU - Moodie, D. G.

AU - Cannard, P. J.

AU - Dann, A. J.

AU - Marcenac, D. D.

AU - Ford, C. W.

AU - Reed, J.

AU - Moore, R. T.

AU - Lucek, J. K.

AU - Ellis, A. D.

N1 - Times Cited: 13

PY - 1997

Y1 - 1997

N2 - Packaged low polarisation sensitivity InGaAs/InAlAs MQW electroabsorption modulators employing a novel ridged deeply etched buried heterostructure design are described. The feasibility of using them in 160Gbit/s OTDM systems is experimentally assessed.

AB - Packaged low polarisation sensitivity InGaAs/InAlAs MQW electroabsorption modulators employing a novel ridged deeply etched buried heterostructure design are described. The feasibility of using them in 160Gbit/s OTDM systems is experimentally assessed.

KW - electro-optical modulation

KW - optical communication equipment

KW - semiconductor quantum wells

KW - electroabsorption

KW - digital communication

KW - indium compounds

KW - time division multiplexing

KW - 160 Gbit/s

KW - optical TDM network

KW - low polarisation sensitivity

UR - http://ieeexplore.ieee.org/stamp/stamp.jsp?arnumber=627825

U2 - 10.1049/el:19971393

DO - 10.1049/el:19971393

M3 - Article

SN - 1350-911X

VL - 33

SP - 2068

EP - 2070

JO - Electronics letters

JF - Electronics letters

IS - 24

ER -

Low polarisation sensitivity electroabsorption modulators for 160Gbit/s networks

Abstract

Bibliographical note

Keywords

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