Low polarisation sensitivity electroabsorption modulators for 160Gbit/s networks

D. G. Moodie; P. J. Cannard; A. J. Dann; D. D. Marcenac; C. W. Ford; J. Reed; R. T. Moore; J. K. Lucek; A. D. Ellis

doi:10.1049/el:19971393

Low polarisation sensitivity electroabsorption modulators for 160Gbit/s networks

D. G. Moodie, P. J. Cannard, A. J. Dann, D. D. Marcenac, C. W. Ford, J. Reed, R. T. Moore, J. K. Lucek, A. D. Ellis

Aston Institute of Photonic Technologies (AiPT)

Research output: Contribution to journal › Article › peer-review

20 Citations (Scopus)

Abstract

Packaged low polarisation sensitivity InGaAs/InAlAs MQW electroabsorption modulators employing a novel ridged deeply etched buried heterostructure design are described. The feasibility of using them in 160Gbit/s OTDM systems is experimentally assessed.

Original language	English
Pages (from-to)	2068-2070
Number of pages	3
Journal	Electronics letters
Volume	33
Issue number	24
DOIs	https://doi.org/10.1049/el:19971393
Publication status	Published - 1997

Bibliographical note

Times Cited: 13

Keywords

electro-optical modulation
optical communication equipment
semiconductor quantum wells
electroabsorption
digital communication
indium compounds
time division multiplexing
160 Gbit/s
optical TDM network
low polarisation sensitivity

Access to Document

10.1049/el:19971393

Cite this

@article{d97155e3f8c4486ba649b7af367280ba,

title = "Low polarisation sensitivity electroabsorption modulators for 160Gbit/s networks",

abstract = "Packaged low polarisation sensitivity InGaAs/InAlAs MQW electroabsorption modulators employing a novel ridged deeply etched buried heterostructure design are described. The feasibility of using them in 160Gbit/s OTDM systems is experimentally assessed.",

keywords = "electro-optical modulation, optical communication equipment, semiconductor quantum wells, electroabsorption, digital communication, indium compounds, time division multiplexing, 160 Gbit/s, optical TDM network, low polarisation sensitivity",

author = "Moodie, {D. G.} and Cannard, {P. J.} and Dann, {A. J.} and Marcenac, {D. D.} and Ford, {C. W.} and J. Reed and Moore, {R. T.} and Lucek, {J. K.} and Ellis, {A. D.}",

note = "Times Cited: 13",

year = "1997",

doi = "10.1049/el:19971393",

language = "English",

volume = "33",

pages = "2068--2070",

journal = "Electronics letters",

issn = "1350-911X",

publisher = "IET",

number = "24",

}

TY - JOUR

T1 - Low polarisation sensitivity electroabsorption modulators for 160Gbit/s networks

AU - Moodie, D. G.

AU - Cannard, P. J.

AU - Dann, A. J.

AU - Marcenac, D. D.

AU - Ford, C. W.

AU - Reed, J.

AU - Moore, R. T.

AU - Lucek, J. K.

AU - Ellis, A. D.

N1 - Times Cited: 13

PY - 1997

Y1 - 1997

N2 - Packaged low polarisation sensitivity InGaAs/InAlAs MQW electroabsorption modulators employing a novel ridged deeply etched buried heterostructure design are described. The feasibility of using them in 160Gbit/s OTDM systems is experimentally assessed.

AB - Packaged low polarisation sensitivity InGaAs/InAlAs MQW electroabsorption modulators employing a novel ridged deeply etched buried heterostructure design are described. The feasibility of using them in 160Gbit/s OTDM systems is experimentally assessed.

KW - electro-optical modulation

KW - optical communication equipment

KW - semiconductor quantum wells

KW - electroabsorption

KW - digital communication

KW - indium compounds

KW - time division multiplexing

KW - 160 Gbit/s

KW - optical TDM network

KW - low polarisation sensitivity

UR - http://ieeexplore.ieee.org/stamp/stamp.jsp?arnumber=627825

U2 - 10.1049/el:19971393

DO - 10.1049/el:19971393

M3 - Article

SN - 1350-911X

VL - 33

SP - 2068

EP - 2070

JO - Electronics letters

JF - Electronics letters

IS - 24

ER -

Low polarisation sensitivity electroabsorption modulators for 160Gbit/s networks

Abstract

Bibliographical note

Keywords

Access to Document

Other files and links

Fingerprint

Cite this