TY - JOUR
T1 - Microstructural and ferroelectric properties of rare earth (Ce, Pr, and Tb)-doped Na
0.5
Bi
4.5
Ti
3
O
15
thin films
AU - Raghavan, Chinnambedu Murugesan
AU - Kim, Jin Won
AU - Song, Tae Kwon
AU - Kim, Sang Su
PY - 2015/11/15
Y1 - 2015/11/15
N2 -
Pure Na
0.5
Bi
4.5
Ti
4
O
15
and rare earth-doped Na
0.5
Bi
4
RE
0.5
Ti
4
O
15
(RE = Ce, Pr, and Tb) thin films were prepared on Pt(1 1 1)/Ti/SiO
2
/Si(1 0 0) substrates by using a chemical solution deposition method. X-ray diffraction and Raman scattering spectroscopy studies revealed that the thin films are crystallized in a single-phase Aurivillius structure with no additional phases. The rare earth-doped Na
0.5
Bi
4
RE
0.5
Ti
4
O
15
thin films exhibited improved electrical and ferroelectric properties. Among the studied rare earth metal ions, the Tb
3+
ion leads to a remarkable improvement in the ferroelectric properties. The use of the Tb
3+
ion for doping resulted in a well-saturated ferroelectric hysteresis loop with a large remnant polarization (2P
r
) of 40 μC/cm
2
and a low coercive electric field (2E
c
) of 176 kV/cm, measured at an applied electric field of 475 kV in the Na
0.5
Bi
4
Tb
0.5
Ti
4
O
15
thin film. Furthermore, the leakage current density of the Na
0.5
Bi
4
Tb
0.5
Ti
4
O
15
thin film was one order of magnitude lower than that of the Na
0.5
Bi
4.5
Ti
4
O
15
thin film.
AB -
Pure Na
0.5
Bi
4.5
Ti
4
O
15
and rare earth-doped Na
0.5
Bi
4
RE
0.5
Ti
4
O
15
(RE = Ce, Pr, and Tb) thin films were prepared on Pt(1 1 1)/Ti/SiO
2
/Si(1 0 0) substrates by using a chemical solution deposition method. X-ray diffraction and Raman scattering spectroscopy studies revealed that the thin films are crystallized in a single-phase Aurivillius structure with no additional phases. The rare earth-doped Na
0.5
Bi
4
RE
0.5
Ti
4
O
15
thin films exhibited improved electrical and ferroelectric properties. Among the studied rare earth metal ions, the Tb
3+
ion leads to a remarkable improvement in the ferroelectric properties. The use of the Tb
3+
ion for doping resulted in a well-saturated ferroelectric hysteresis loop with a large remnant polarization (2P
r
) of 40 μC/cm
2
and a low coercive electric field (2E
c
) of 176 kV/cm, measured at an applied electric field of 475 kV in the Na
0.5
Bi
4
Tb
0.5
Ti
4
O
15
thin film. Furthermore, the leakage current density of the Na
0.5
Bi
4
Tb
0.5
Ti
4
O
15
thin film was one order of magnitude lower than that of the Na
0.5
Bi
4.5
Ti
4
O
15
thin film.
KW - Chemical solution deposition
KW - Electrical properties
KW - Ferroelectricity
KW - Microstructure
KW - Thin films
UR - http://www.scopus.com/inward/record.url?scp=84944324590&partnerID=8YFLogxK
UR - https://www.sciencedirect.com/science/article/pii/S0169433215017766?via%3Dihub
U2 - 10.1016/j.apsusc.2015.07.199
DO - 10.1016/j.apsusc.2015.07.199
M3 - Article
AN - SCOPUS:84944324590
SN - 0169-4332
VL - 355
SP - 1007
EP - 1012
JO - Applied Surface Science
JF - Applied Surface Science
ER -