Microstructural, electrical and ferroelectric properties of BiFe
                        0.95
                        Mn
                        0.05
                        O
                        3
                         thin film grown on Ge-doped ZnO electrode

C. M. Raghavan; J. W. Kim; T. K. Song; S. S. Kim

doi:10.1016/j.materresbull.2015.10.033

Microstructural, electrical and ferroelectric properties of BiFe _0.95 Mn _0.05 O ₃ thin film grown on Ge-doped ZnO electrode

C. M. Raghavan
, J. W. Kim
, T. K. Song
, S. S. Kim^*

^*Corresponding author for this work

Aston Institute of Photonic Technologies (AiPT)

Changwon National University

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

The structural, electrical and ferroelectric properties of a Mn-doped BiFe _0.95 Mn _0.05 O ₃ (BFMO) thin film grown on a (0 0 l) textured Ge-doped ZnO (GZO)/Si(1 0 0) substrate are reported. The GZO served as a buffer layer for improving the grain growth and the crystallization of the BFMO thin film. Predominantly, the GZO layer, which promotes the grain growth of the (l 0 0) textured BFMO thin film, was utilized as both top and bottom electrodes to assess the electrical and the ferroelectric properties of the BFMO thin film. A study of the electrical properties revealed a low leakage current density (4.95 × 10 ^-6 A/cm ² at 100 kV/cm) and a large stability against electrical breakdown for the GZO/BFMO/GZO capacitor. The ferroelectric study determined a large value for the remnant polarization (2P _r ), 78.37 μC/cm ² , at an applied electric field of 895 kV/cm for the GZO/BFMO/GZO capacitor. Furthermore, the GZO/BFMO/GZO capacitor showed stable polarization switching even after 1.44 × 10 ¹⁰ electrical cycles.

Original language	English
Pages (from-to)	164-168
Number of pages	5
Journal	Materials Research Bulletin
Volume	74
DOIs	https://doi.org/10.1016/j.materresbull.2015.10.033
Publication status	Published - 1 Feb 2016

Funding

This work was supported by the Priority Research Centers Program through the National Research Foundation (NRF) of Korea funded by the Ministry of Education, Science and Technology ( 2010-0029634 ).

Keywords

A. Thin films
B. Laser deposition
B. Microstructure
D. Electrical properties
D. Ferroelectricity

Access to Document

10.1016/j.materresbull.2015.10.033

Cite this

Raghavan, C. M., Kim, J. W., Song, T. K., & Kim, S. S. (2016). Microstructural, electrical and ferroelectric properties of BiFe _0.95 Mn _0.05 O ₃ thin film grown on Ge-doped ZnO electrode. Materials Research Bulletin, 74, 164-168. https://doi.org/10.1016/j.materresbull.2015.10.033

Raghavan, C. M. ; Kim, J. W. ; Song, T. K. et al. / Microstructural, electrical and ferroelectric properties of BiFe _0.95 Mn _0.05 O ₃ thin film grown on Ge-doped ZnO electrode. In: Materials Research Bulletin. 2016 ; Vol. 74. pp. 164-168.

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title = "Microstructural, electrical and ferroelectric properties of BiFe 0.95 Mn 0.05 O 3 thin film grown on Ge-doped ZnO electrode",

abstract = " The structural, electrical and ferroelectric properties of a Mn-doped BiFe 0.95 Mn 0.05 O 3 (BFMO) thin film grown on a (0 0 l) textured Ge-doped ZnO (GZO)/Si(1 0 0) substrate are reported. The GZO served as a buffer layer for improving the grain growth and the crystallization of the BFMO thin film. Predominantly, the GZO layer, which promotes the grain growth of the (l 0 0) textured BFMO thin film, was utilized as both top and bottom electrodes to assess the electrical and the ferroelectric properties of the BFMO thin film. A study of the electrical properties revealed a low leakage current density (4.95 × 10 -6 A/cm 2 at 100 kV/cm) and a large stability against electrical breakdown for the GZO/BFMO/GZO capacitor. The ferroelectric study determined a large value for the remnant polarization (2P r ), 78.37 μC/cm 2 , at an applied electric field of 895 kV/cm for the GZO/BFMO/GZO capacitor. Furthermore, the GZO/BFMO/GZO capacitor showed stable polarization switching even after 1.44 × 10 10 electrical cycles. ",

keywords = "A. Thin films, B. Laser deposition, B. Microstructure, D. Electrical properties, D. Ferroelectricity",

author = "Raghavan, \{C. M.\} and Kim, \{J. W.\} and Song, \{T. K.\} and Kim, \{S. S.\}",

year = "2016",

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doi = "10.1016/j.materresbull.2015.10.033",

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Raghavan, CM, Kim, JW, Song, TK & Kim, SS 2016, 'Microstructural, electrical and ferroelectric properties of BiFe _0.95 Mn _0.05 O ₃ thin film grown on Ge-doped ZnO electrode', Materials Research Bulletin, vol. 74, pp. 164-168. https://doi.org/10.1016/j.materresbull.2015.10.033

Microstructural, electrical and ferroelectric properties of BiFe _0.95 Mn _0.05 O ₃ thin film grown on Ge-doped ZnO electrode. / Raghavan, C. M.; Kim, J. W.; Song, T. K. et al.
In: Materials Research Bulletin, Vol. 74, 01.02.2016, p. 164-168.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Microstructural, electrical and ferroelectric properties of BiFe 0.95 Mn 0.05 O 3 thin film grown on Ge-doped ZnO electrode

AU - Raghavan, C. M.

AU - Kim, J. W.

AU - Song, T. K.

AU - Kim, S. S.

PY - 2016/2/1

Y1 - 2016/2/1

N2 - The structural, electrical and ferroelectric properties of a Mn-doped BiFe 0.95 Mn 0.05 O 3 (BFMO) thin film grown on a (0 0 l) textured Ge-doped ZnO (GZO)/Si(1 0 0) substrate are reported. The GZO served as a buffer layer for improving the grain growth and the crystallization of the BFMO thin film. Predominantly, the GZO layer, which promotes the grain growth of the (l 0 0) textured BFMO thin film, was utilized as both top and bottom electrodes to assess the electrical and the ferroelectric properties of the BFMO thin film. A study of the electrical properties revealed a low leakage current density (4.95 × 10 -6 A/cm 2 at 100 kV/cm) and a large stability against electrical breakdown for the GZO/BFMO/GZO capacitor. The ferroelectric study determined a large value for the remnant polarization (2P r ), 78.37 μC/cm 2 , at an applied electric field of 895 kV/cm for the GZO/BFMO/GZO capacitor. Furthermore, the GZO/BFMO/GZO capacitor showed stable polarization switching even after 1.44 × 10 10 electrical cycles.

AB - The structural, electrical and ferroelectric properties of a Mn-doped BiFe 0.95 Mn 0.05 O 3 (BFMO) thin film grown on a (0 0 l) textured Ge-doped ZnO (GZO)/Si(1 0 0) substrate are reported. The GZO served as a buffer layer for improving the grain growth and the crystallization of the BFMO thin film. Predominantly, the GZO layer, which promotes the grain growth of the (l 0 0) textured BFMO thin film, was utilized as both top and bottom electrodes to assess the electrical and the ferroelectric properties of the BFMO thin film. A study of the electrical properties revealed a low leakage current density (4.95 × 10 -6 A/cm 2 at 100 kV/cm) and a large stability against electrical breakdown for the GZO/BFMO/GZO capacitor. The ferroelectric study determined a large value for the remnant polarization (2P r ), 78.37 μC/cm 2 , at an applied electric field of 895 kV/cm for the GZO/BFMO/GZO capacitor. Furthermore, the GZO/BFMO/GZO capacitor showed stable polarization switching even after 1.44 × 10 10 electrical cycles.

KW - A. Thin films

KW - B. Laser deposition

KW - B. Microstructure

KW - D. Electrical properties

KW - D. Ferroelectricity

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M3 - Article

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SN - 0025-5408

VL - 74

SP - 164

EP - 168

JO - Materials Research Bulletin

JF - Materials Research Bulletin

ER -

Raghavan CM, Kim JW, Song TK, Kim SS. Microstructural, electrical and ferroelectric properties of BiFe _0.95 Mn _0.05 O ₃ thin film grown on Ge-doped ZnO electrode. Materials Research Bulletin. 2016 Feb 1;74:164-168. doi: 10.1016/j.materresbull.2015.10.033