Aurivillius type M0.5Bi4.5-xSmxTi4O15 (x = 0 and 0.5, M = Na or K) thin films were prepared on Pt(111)/Ti/Si/SiO2(100) substrates by using a chemical solution deposition method. Fabricated thin films were crystallized in pure Aurivillius phase orthorhombic structures, which were confirmed by X-ray diffraction and Raman spectroscopy studies. The use of Sm3+-ions for doping purposes results in remarkable improvements in electrical and ferroelectric properties of the M0.5Bi4.5-xSmxTi4O15 thin films. A study of the ferroelectric hysteresis loops enabled the remnant polarization (2Pr) and coercive field (2Ec) values for the Na0.5Bi4Sm0.5Ti4O15 and the K0.5Bi4Sm0.5Ti4O15 thin films to be measured as 34.4 mC/cm2 and 220 kV/cm at an applied electric field of 475 kV/cm and 36.0 mC/cm2 and 103 kV/cm at 231 kV/cm, respectively. The 2Pr values measured for the thin films doped with Sm3+-ions were much larger than those of the un-doped thin films. The 2Ec values of the M0.5Bi4.5-xSmxTi4O15 thin films were also drastically lowered. Furthermore, low leakage current densities were measured for the M0.5Bi4.5-xSmxTi4O15 thin films.
|Number of pages||6|
|Journal||Journal of Ceramic Processing Research|
|Publication status||Published - 1 Jan 2017|
- Electrical properties
- Ferroelectric materials
- Thin films
- X-ray methods