TY - JOUR
T1 - Microstructure and conduction behavior of BiFeO3 thin film deposited on Ge-doped ZnO
AU - Raghavan, Chinnambedu Murugesan
AU - Choi, Ji Ya
AU - Kim, Sang Su
PY - 2017/2/6
Y1 - 2017/2/6
N2 - BiFeO3 (BFO) thin films were deposited on a Ge-doped ZnO (GZO)/Si(100) and a Pt(111)/Ti/SiO2/Si(100) using a pulsed laser deposition technique. An improved crystal growth property was observed for the BFO thin film deposited on the GZO/Si(100). The BFO thin film, which was deposited on the (00l) textured GZO/Si(100), exhibited preferred (l00) orientated grains, while randomly orientated grains were observed for the thin film deposited on the Pt(111)/Ti/SiO2/Si(100). When compared with the Pt/BFO/Pt capacitor, the GZO/BFO/GZO capacitor exhibited improved conduction behaviors, such as a low leakage current density and high stability against electrical breakdown. From the J–E curves, conduction of the GZO/BFO/GZO and the Pt/BFO/Pt capacitors was found to be dominated by Ohmic and space charge limited conductions at low and high electric field, respectively.
AB - BiFeO3 (BFO) thin films were deposited on a Ge-doped ZnO (GZO)/Si(100) and a Pt(111)/Ti/SiO2/Si(100) using a pulsed laser deposition technique. An improved crystal growth property was observed for the BFO thin film deposited on the GZO/Si(100). The BFO thin film, which was deposited on the (00l) textured GZO/Si(100), exhibited preferred (l00) orientated grains, while randomly orientated grains were observed for the thin film deposited on the Pt(111)/Ti/SiO2/Si(100). When compared with the Pt/BFO/Pt capacitor, the GZO/BFO/GZO capacitor exhibited improved conduction behaviors, such as a low leakage current density and high stability against electrical breakdown. From the J–E curves, conduction of the GZO/BFO/GZO and the Pt/BFO/Pt capacitors was found to be dominated by Ohmic and space charge limited conductions at low and high electric field, respectively.
UR - http://www.scopus.com/inward/record.url?scp=85011865873&partnerID=8YFLogxK
UR - https://link.springer.com/article/10.1007%2Fs00339-017-0773-0
U2 - 10.1007/s00339-017-0773-0
DO - 10.1007/s00339-017-0773-0
M3 - Article
AN - SCOPUS:85011865873
SN - 0947-8396
VL - 123
JO - Applied Physics A: Materials Science and Processing
JF - Applied Physics A: Materials Science and Processing
IS - 2
M1 - 145
ER -