Abstract
BiFeO3 (BFO) thin films were deposited on a Ge-doped ZnO (GZO)/Si(100) and a Pt(111)/Ti/SiO2/Si(100) using a pulsed laser deposition technique. An improved crystal growth property was observed for the BFO thin film deposited on the GZO/Si(100). The BFO thin film, which was deposited on the (00l) textured GZO/Si(100), exhibited preferred (l00) orientated grains, while randomly orientated grains were observed for the thin film deposited on the Pt(111)/Ti/SiO2/Si(100). When compared with the Pt/BFO/Pt capacitor, the GZO/BFO/GZO capacitor exhibited improved conduction behaviors, such as a low leakage current density and high stability against electrical breakdown. From the J–E curves, conduction of the GZO/BFO/GZO and the Pt/BFO/Pt capacitors was found to be dominated by Ohmic and space charge limited conductions at low and high electric field, respectively.
| Original language | English |
|---|---|
| Article number | 145 |
| Journal | Applied Physics A: Materials Science and Processing |
| Volume | 123 |
| Issue number | 2 |
| DOIs | |
| Publication status | Published - 6 Feb 2017 |
Funding
This work was supported by the Priority Research Centers Program through the National Research Foundation (NRF) of Korea funded by the Ministry of Education, Science and Technology (2010???0029634).