Microstructures and electrical properties of a Li-ZnO/BiFeO3 double-layered thin film fabricated by a chemical solution deposition method

Chinnambedu Murugesan Raghavan, Jin Won Kim, Ji Ya Choi, Tae Kwon Song, Sang Su Kim*

*Corresponding author for this work

Research output: Contribution to journalArticle

Abstract

In this report, the structural, microstructural, electrical, dielectric, and ferroelectric properties of a Zn0.88Li0.12O1-δ/BiFeO3 double-layered thin film are reported. A chemical solution deposition method was used to deposit the Zn0.88Li0.12O1-δ/BiFeO3 double-layered thin film on the Pt(111)/Ti/SiO2/Si(100) substrate. X-ray diffraction and Raman spectroscopic studies indicated the formation of hexagonal wurtzite and rhombohedral perovskite structures for the double-layered thin film. As compared with the BiFeO3 thin film, the Zn0.88Li0.12O1-δ/BiFeO3 thin film exhibited enhanced electrical, dielectric, and ferroelectric properties. The leakage current density value of the Zn0.88Li0.12O1-δ/BiFeO3 double-layered thin film was 1.90×10-4 A/cm2 at an applied electric field of 100 kV/cm, which was approximately two orders of magnitude lower than that of the BiFeO3 thin film. Moreover, the ferroelectric hysteresis studies revealed a large remnant polarization (2Pr) (11.3 μC/cm2) and a low coercive electric field (307 kV/cm) for the double-layered thin film.

Original languageEnglish
Pages (from-to)S303-S307
JournalCeramics International
Volume41
Issue numberS1
DOIs
Publication statusPublished - 1 Jul 2015

Keywords

  • A. Sol-gel processes
  • C. Electrical properties
  • C. Ferroelectric properties
  • D. Perovskites

Fingerprint Dive into the research topics of 'Microstructures and electrical properties of a Li-ZnO/BiFeO<sub>3</sub> double-layered thin film fabricated by a chemical solution deposition method'. Together they form a unique fingerprint.

  • Cite this