Microstructures and electrical properties of a Li-ZnO/BiFeO3 double-layered thin film fabricated by a chemical solution deposition method

Chinnambedu Murugesan Raghavan; Jin Won Kim; Ji Ya Choi; Tae Kwon Song; Sang Su Kim

doi:10.1016/j.ceramint.2015.03.207

Microstructures and electrical properties of a Li-ZnO/BiFeO₃ double-layered thin film fabricated by a chemical solution deposition method

Chinnambedu Murugesan Raghavan
, Jin Won Kim
, Ji Ya Choi
, Tae Kwon Song
, Sang Su Kim^*

^*Corresponding author for this work

Changwon National University

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

In this report, the structural, microstructural, electrical, dielectric, and ferroelectric properties of a Zn_0.88Li_0.12O_1-δ/BiFeO₃ double-layered thin film are reported. A chemical solution deposition method was used to deposit the Zn_0.88Li_0.12O_1-δ/BiFeO₃ double-layered thin film on the Pt(111)/Ti/SiO₂/Si(100) substrate. X-ray diffraction and Raman spectroscopic studies indicated the formation of hexagonal wurtzite and rhombohedral perovskite structures for the double-layered thin film. As compared with the BiFeO₃ thin film, the Zn_0.88Li_0.12O_1-δ/BiFeO₃ thin film exhibited enhanced electrical, dielectric, and ferroelectric properties. The leakage current density value of the Zn_0.88Li_0.12O_1-δ/BiFeO₃ double-layered thin film was 1.90×10^-4 A/cm² at an applied electric field of 100 kV/cm, which was approximately two orders of magnitude lower than that of the BiFeO₃ thin film. Moreover, the ferroelectric hysteresis studies revealed a large remnant polarization (2P_r) (11.3 μC/cm²) and a low coercive electric field (307 kV/cm) for the double-layered thin film.

Original language	English
Pages (from-to)	S303-S307
Journal	Ceramics International
Volume	41
Issue number	S1
DOIs	https://doi.org/10.1016/j.ceramint.2015.03.207
Publication status	Published - 1 Jul 2015

Funding

This work was supported by the Priority Research Centers Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education , Republic of Korea ( 2010-0029634 ).

Keywords

A. Sol-gel processes
C. Electrical properties
C. Ferroelectric properties
D. Perovskites

Access to Document

10.1016/j.ceramint.2015.03.207

Cite this

@article{49d8c00479b749f7a8743224d484606b,

title = "Microstructures and electrical properties of a Li-ZnO/BiFeO3 double-layered thin film fabricated by a chemical solution deposition method",

abstract = "In this report, the structural, microstructural, electrical, dielectric, and ferroelectric properties of a Zn0.88Li0.12O1-δ/BiFeO3 double-layered thin film are reported. A chemical solution deposition method was used to deposit the Zn0.88Li0.12O1-δ/BiFeO3 double-layered thin film on the Pt(111)/Ti/SiO2/Si(100) substrate. X-ray diffraction and Raman spectroscopic studies indicated the formation of hexagonal wurtzite and rhombohedral perovskite structures for the double-layered thin film. As compared with the BiFeO3 thin film, the Zn0.88Li0.12O1-δ/BiFeO3 thin film exhibited enhanced electrical, dielectric, and ferroelectric properties. The leakage current density value of the Zn0.88Li0.12O1-δ/BiFeO3 double-layered thin film was 1.90×10-4 A/cm2 at an applied electric field of 100 kV/cm, which was approximately two orders of magnitude lower than that of the BiFeO3 thin film. Moreover, the ferroelectric hysteresis studies revealed a large remnant polarization (2Pr) (11.3 μC/cm2) and a low coercive electric field (307 kV/cm) for the double-layered thin film.",

keywords = "A. Sol-gel processes, C. Electrical properties, C. Ferroelectric properties, D. Perovskites",

author = "Raghavan, \{Chinnambedu Murugesan\} and Kim, \{Jin Won\} and Choi, \{Ji Ya\} and Song, \{Tae Kwon\} and Kim, \{Sang Su\}",

year = "2015",

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doi = "10.1016/j.ceramint.2015.03.207",

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T1 - Microstructures and electrical properties of a Li-ZnO/BiFeO3 double-layered thin film fabricated by a chemical solution deposition method

AU - Raghavan, Chinnambedu Murugesan

AU - Kim, Jin Won

AU - Choi, Ji Ya

AU - Song, Tae Kwon

AU - Kim, Sang Su

PY - 2015/7/1

Y1 - 2015/7/1

N2 - In this report, the structural, microstructural, electrical, dielectric, and ferroelectric properties of a Zn0.88Li0.12O1-δ/BiFeO3 double-layered thin film are reported. A chemical solution deposition method was used to deposit the Zn0.88Li0.12O1-δ/BiFeO3 double-layered thin film on the Pt(111)/Ti/SiO2/Si(100) substrate. X-ray diffraction and Raman spectroscopic studies indicated the formation of hexagonal wurtzite and rhombohedral perovskite structures for the double-layered thin film. As compared with the BiFeO3 thin film, the Zn0.88Li0.12O1-δ/BiFeO3 thin film exhibited enhanced electrical, dielectric, and ferroelectric properties. The leakage current density value of the Zn0.88Li0.12O1-δ/BiFeO3 double-layered thin film was 1.90×10-4 A/cm2 at an applied electric field of 100 kV/cm, which was approximately two orders of magnitude lower than that of the BiFeO3 thin film. Moreover, the ferroelectric hysteresis studies revealed a large remnant polarization (2Pr) (11.3 μC/cm2) and a low coercive electric field (307 kV/cm) for the double-layered thin film.

AB - In this report, the structural, microstructural, electrical, dielectric, and ferroelectric properties of a Zn0.88Li0.12O1-δ/BiFeO3 double-layered thin film are reported. A chemical solution deposition method was used to deposit the Zn0.88Li0.12O1-δ/BiFeO3 double-layered thin film on the Pt(111)/Ti/SiO2/Si(100) substrate. X-ray diffraction and Raman spectroscopic studies indicated the formation of hexagonal wurtzite and rhombohedral perovskite structures for the double-layered thin film. As compared with the BiFeO3 thin film, the Zn0.88Li0.12O1-δ/BiFeO3 thin film exhibited enhanced electrical, dielectric, and ferroelectric properties. The leakage current density value of the Zn0.88Li0.12O1-δ/BiFeO3 double-layered thin film was 1.90×10-4 A/cm2 at an applied electric field of 100 kV/cm, which was approximately two orders of magnitude lower than that of the BiFeO3 thin film. Moreover, the ferroelectric hysteresis studies revealed a large remnant polarization (2Pr) (11.3 μC/cm2) and a low coercive electric field (307 kV/cm) for the double-layered thin film.

KW - A. Sol-gel processes

KW - C. Electrical properties

KW - C. Ferroelectric properties

KW - D. Perovskites

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