Mode-locked semiconductor lasers with optical injection

Tatiana Habruseva, Natalia Rebrova, Stephen P. Hegarty, Guillaume Huyet

Research output: Chapter in Book/Report/Conference proceedingChapter (peer-reviewed)

Abstract

We perform characterization of the pulse shape and noise properties of quantum dot passively mode-locked lasers (PMLLs). We propose a novel method to determine the RF linewidth and timing jitter, applicable to high repetition rate PMLLs, through the dependence of modal linewidth on the mode number. Complex electric field measurements show asymmetric pulses with parabolic phase close to threshold, with the appearance of waveform instabilities at higher currents. We demonstrate that the waveform instabilities can be overcome through optical injection-locking to the continues wave (CW) master laser, leading to time-bandwidth product (TBP) improvement, spectral narrowing, and spectral tunability. We discuss the benefits of single- and dual-tone master sources and demonstrate that dual-tone optical injection can additionally improve the noise properties of the slave laser with RF linewidth reduction below instrument limits (1 kHz) and integrated timing jitter values below 300 fs. Dual-tone injection allowed slave laser repetition rate control over a 25 MHz range with reduction of all modal optical linewidths to the master source linewidth, demonstrating phase-locking of all slave modes and coherence improvement.
Original languageEnglish
Title of host publicationQuantum dot devices
EditorsZhiming M. Wang
Place of PublicationNew York (US)
PublisherSpringer
Pages65-92
Number of pages28
ISBN (Electronic)978-1-4614-3570-9
ISBN (Print)978-1-4614-3569-3
DOIs
Publication statusPublished - 26 May 2012

Publication series

NameLecture notes in nanoscale science and technology
Number13

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Cite this

Habruseva, T., Rebrova, N., Hegarty, S. P., & Huyet, G. (2012). Mode-locked semiconductor lasers with optical injection. In Z. M. Wang (Ed.), Quantum dot devices (pp. 65-92). (Lecture notes in nanoscale science and technology; No. 13). Springer. https://doi.org/10.1007/978-1-4614-3570-9