Active mode locking is reported for a 1.55 μm semiconductor laser with a curved waveguide and passive mode expander, placed in a wavelength tunable external cavity. One facet with a very low reflectivity of 8×10−6 is achieved through a curved active region that tapers into an underlying passive waveguide, thus expanding the mode to give reduced divergence. 10 GHz pulses of 3.1 ps duration have been generated, with a linewidth of 0.81 nm.
Bibliographical note© 2003 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Appl. Phys. Lett. 82, 322 (2003) and may be found at https://doi.org/10.1063/1.1539277
- mode locking
- semiconductor lasers
- laser resonators