MOS based nanocapacitor using C-AFM

Daniel Hill, Sascha Sadewasser, Xavier Aymerich

Research output: Contribution to journalConference article

Abstract

Nanocapacitors are integral devices of nanoscale MOS based integrated circuits and have not yet been realised. We report in this article our results to date on the realisation of such a nanocapacitor through the use of Atomic Force Microscopy (AFM) anodic oxidation to isolate nano-sized squares of poly-silicon, titanium and aluminium on Si/SiO2. The focus of this work is on the Conductive AFM performed topographical and electrical characterization.

Original languageEnglish
Pages (from-to)507-514
Number of pages8
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume5118
DOIs
Publication statusPublished - 29 Apr 2003
EventNonatechnology - Maspalomas, Gran Canaria, Spain
Duration: 19 May 200321 May 2003

Fingerprint

Atomic Force Microscopy
Atomic force microscopy
atomic force microscopy
Titanium
SiO2
Anodic oxidation
Silicon
Integrated Circuits
Aluminum
Oxidation
integrated circuits
Integrated circuits
titanium
aluminum
oxidation
silicon

Bibliographical note

Copyright 2003 SPIE. One print or electronic copy may be made for personal use only. Systematic reproduction, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper are prohibited.

Keywords

  • AFM
  • Nanodevices
  • Nanofabrication
  • SPM

Cite this

Hill, Daniel ; Sadewasser, Sascha ; Aymerich, Xavier. / MOS based nanocapacitor using C-AFM. In: Proceedings of SPIE - The International Society for Optical Engineering. 2003 ; Vol. 5118. pp. 507-514.
@article{621bdffd6a4242b5b8405503d2b20b20,
title = "MOS based nanocapacitor using C-AFM",
abstract = "Nanocapacitors are integral devices of nanoscale MOS based integrated circuits and have not yet been realised. We report in this article our results to date on the realisation of such a nanocapacitor through the use of Atomic Force Microscopy (AFM) anodic oxidation to isolate nano-sized squares of poly-silicon, titanium and aluminium on Si/SiO2. The focus of this work is on the Conductive AFM performed topographical and electrical characterization.",
keywords = "AFM, Nanodevices, Nanofabrication, SPM",
author = "Daniel Hill and Sascha Sadewasser and Xavier Aymerich",
note = "Copyright 2003 SPIE. One print or electronic copy may be made for personal use only. Systematic reproduction, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper are prohibited.",
year = "2003",
month = "4",
day = "29",
doi = "10.1117/12.498556",
language = "English",
volume = "5118",
pages = "507--514",
journal = "Proceedings of SPIE - International Society for Optical Engineering",
issn = "0277-786X",
publisher = "SPIE",

}

MOS based nanocapacitor using C-AFM. / Hill, Daniel; Sadewasser, Sascha; Aymerich, Xavier.

In: Proceedings of SPIE - The International Society for Optical Engineering, Vol. 5118, 29.04.2003, p. 507-514.

Research output: Contribution to journalConference article

TY - JOUR

T1 - MOS based nanocapacitor using C-AFM

AU - Hill, Daniel

AU - Sadewasser, Sascha

AU - Aymerich, Xavier

N1 - Copyright 2003 SPIE. One print or electronic copy may be made for personal use only. Systematic reproduction, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper are prohibited.

PY - 2003/4/29

Y1 - 2003/4/29

N2 - Nanocapacitors are integral devices of nanoscale MOS based integrated circuits and have not yet been realised. We report in this article our results to date on the realisation of such a nanocapacitor through the use of Atomic Force Microscopy (AFM) anodic oxidation to isolate nano-sized squares of poly-silicon, titanium and aluminium on Si/SiO2. The focus of this work is on the Conductive AFM performed topographical and electrical characterization.

AB - Nanocapacitors are integral devices of nanoscale MOS based integrated circuits and have not yet been realised. We report in this article our results to date on the realisation of such a nanocapacitor through the use of Atomic Force Microscopy (AFM) anodic oxidation to isolate nano-sized squares of poly-silicon, titanium and aluminium on Si/SiO2. The focus of this work is on the Conductive AFM performed topographical and electrical characterization.

KW - AFM

KW - Nanodevices

KW - Nanofabrication

KW - SPM

UR - http://www.scopus.com/inward/record.url?scp=0041780771&partnerID=8YFLogxK

UR - https://www.spiedigitallibrary.org/conference-proceedings-of-spie/5118/1/MOS-based-nanocapacitor-using-C-AFM/10.1117/12.498556.full

U2 - 10.1117/12.498556

DO - 10.1117/12.498556

M3 - Conference article

VL - 5118

SP - 507

EP - 514

JO - Proceedings of SPIE - International Society for Optical Engineering

JF - Proceedings of SPIE - International Society for Optical Engineering

SN - 0277-786X

ER -