Nanocapacitors are integral devices of nanoscale MOS based integrated circuits and have not yet been realised. We report in this article our results to date on the realisation of such a nanocapacitor through the use of Atomic Force Microscopy (AFM) anodic oxidation to isolate nano-sized squares of poly-silicon, titanium and aluminium on Si/SiO2. The focus of this work is on the Conductive AFM performed topographical and electrical characterization.
|Number of pages||8|
|Journal||Proceedings of SPIE - The International Society for Optical Engineering|
|Publication status||Published - 29 Apr 2003|
|Event||Nonatechnology - Maspalomas, Gran Canaria, Spain|
Duration: 19 May 2003 → 21 May 2003
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