MOS based nanocapacitor using C-AFM

Daniel Hill*, Sascha Sadewasser, Xavier Aymerich

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review


Nanocapacitors are integral devices of nanoscale MOS based integrated circuits and have not yet been realised. We report in this article our results to date on the realisation of such a nanocapacitor through the use of Atomic Force Microscopy (AFM) anodic oxidation to isolate nano-sized squares of poly-silicon, titanium and aluminium on Si/SiO2. The focus of this work is on the Conductive AFM performed topographical and electrical characterization.

Original languageEnglish
Pages (from-to)507-514
Number of pages8
JournalProceedings of SPIE - The International Society for Optical Engineering
Publication statusPublished - 29 Apr 2003
EventNonatechnology - Maspalomas, Gran Canaria, Spain
Duration: 19 May 200321 May 2003

Bibliographical note

Copyright 2003 SPIE. One print or electronic copy may be made for personal use only. Systematic reproduction, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper are prohibited.


  • AFM
  • Nanodevices
  • Nanofabrication
  • SPM


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