MOS based nanocapacitor using C-AFM

Daniel Hill; Sascha Sadewasser; Xavier Aymerich

doi:10.1117/12.498556

MOS based nanocapacitor using C-AFM

Daniel Hill^*, Sascha Sadewasser, Xavier Aymerich

^*Corresponding author for this work

Aston Institute of Photonic Technologies (AiPT)

Research output: Contribution to journal › Conference article › peer-review

Abstract

Nanocapacitors are integral devices of nanoscale MOS based integrated circuits and have not yet been realised. We report in this article our results to date on the realisation of such a nanocapacitor through the use of Atomic Force Microscopy (AFM) anodic oxidation to isolate nano-sized squares of poly-silicon, titanium and aluminium on Si/SiO₂. The focus of this work is on the Conductive AFM performed topographical and electrical characterization.

Original language	English
Pages (from-to)	507-514
Number of pages	8
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	5118
DOIs	https://doi.org/10.1117/12.498556
Publication status	Published - 29 Apr 2003
Event	Nonatechnology - Maspalomas, Gran Canaria, Spain Duration: 19 May 2003 → 21 May 2003

Bibliographical note

Copyright 2003 SPIE. One print or electronic copy may be made for personal use only. Systematic reproduction, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper are prohibited.

Keywords

AFM
Nanodevices
Nanofabrication
SPM

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10.1117/12.498556

MOS-based nanocapacitor using C-AFM
Copyright 2003 SPIE. One print or electronic copy may be made for personal use only. Systematic reproduction, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper are prohibited.
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Cite this

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abstract = "Nanocapacitors are integral devices of nanoscale MOS based integrated circuits and have not yet been realised. We report in this article our results to date on the realisation of such a nanocapacitor through the use of Atomic Force Microscopy (AFM) anodic oxidation to isolate nano-sized squares of poly-silicon, titanium and aluminium on Si/SiO2. The focus of this work is on the Conductive AFM performed topographical and electrical characterization.",

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AU - Sadewasser, Sascha

AU - Aymerich, Xavier

N1 - Copyright 2003 SPIE. One print or electronic copy may be made for personal use only. Systematic reproduction, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper are prohibited.

PY - 2003/4/29

Y1 - 2003/4/29

N2 - Nanocapacitors are integral devices of nanoscale MOS based integrated circuits and have not yet been realised. We report in this article our results to date on the realisation of such a nanocapacitor through the use of Atomic Force Microscopy (AFM) anodic oxidation to isolate nano-sized squares of poly-silicon, titanium and aluminium on Si/SiO2. The focus of this work is on the Conductive AFM performed topographical and electrical characterization.

AB - Nanocapacitors are integral devices of nanoscale MOS based integrated circuits and have not yet been realised. We report in this article our results to date on the realisation of such a nanocapacitor through the use of Atomic Force Microscopy (AFM) anodic oxidation to isolate nano-sized squares of poly-silicon, titanium and aluminium on Si/SiO2. The focus of this work is on the Conductive AFM performed topographical and electrical characterization.

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KW - Nanodevices

KW - Nanofabrication

KW - SPM

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JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

T2 - Nonatechnology

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MOS based nanocapacitor using C-AFM

Abstract

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