Multiple conduction paths in boron δ-doped diamond structures

Niall Tumilty, Joseph Welch, Haitao Ye, Christopher Wort, Richard Lang, Richard S. Balmer, Richard B. Jackman

    Research output: Contribution to journalArticlepeer-review

    Abstract

    Impedance spectroscopy has been used to investigate conductivity within boron-doped diamond in an intrinsic/delta-doped/intrinsic (i-d-i) multilayer structure. For a 5 nm thick delta layer, three conduction pathways are observed, which can be assigned to transport within the delta layer and to two differing conduction paths in the i-layers adjoining the delta layer. For transport in the i-layers, thermal trapping/detrapping processes can be observed, and only at the highest temperature investigated (673 K) can transport due to a single conduction process be seen. Impedance spectroscopy is an ideal nondestructive tool for investigating the electrical characteristics of complex diamond structures.
    Original languageEnglish
    Article number052107
    Pages (from-to)052107
    Number of pages1
    JournalApplied Physics Letters
    Volume94
    Issue number5
    DOIs
    Publication statusPublished - 2 Feb 2009

    Keywords

    • boron
    • diamond
    • electrical conductivity
    • elemental semiconductors
    • multilayers

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