Multiple conduction paths in boron δ-doped diamond structures

Niall Tumilty, Joseph Welch, Haitao Ye, Christopher Wort, Richard Lang, Richard S. Balmer, Richard B. Jackman

Research output: Contribution to journalArticlepeer-review

Abstract

Impedance spectroscopy has been used to investigate conductivity within boron-doped diamond in an intrinsic/delta-doped/intrinsic (i-d-i) multilayer structure. For a 5 nm thick delta layer, three conduction pathways are observed, which can be assigned to transport within the delta layer and to two differing conduction paths in the i-layers adjoining the delta layer. For transport in the i-layers, thermal trapping/detrapping processes can be observed, and only at the highest temperature investigated (673 K) can transport due to a single conduction process be seen. Impedance spectroscopy is an ideal nondestructive tool for investigating the electrical characteristics of complex diamond structures.
Original languageEnglish
Article number052107
Pages (from-to)052107
Number of pages1
JournalApplied Physics Letters
Volume94
Issue number5
DOIs
Publication statusPublished - 2 Feb 2009

Keywords

  • boron
  • diamond
  • electrical conductivity
  • elemental semiconductors
  • multilayers

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