Multiple conduction paths in boron δ-doped diamond structures

Niall Tumilty; Joseph Welch; Haitao Ye; Christopher Wort; Richard Lang; Richard S. Balmer; Richard B. Jackman

doi:10.1063/1.3075860

Multiple conduction paths in boron δ-doped diamond structures

Niall Tumilty
, Joseph Welch
, Haitao Ye
, Christopher Wort
, Richard Lang
, Richard S. Balmer
, Richard B. Jackman

Research output: Contribution to journal › Article › peer-review

12 Citations (Scopus)

Abstract

Impedance spectroscopy has been used to investigate conductivity within boron-doped diamond in an intrinsic/delta-doped/intrinsic (i-d-i) multilayer structure. For a 5 nm thick delta layer, three conduction pathways are observed, which can be assigned to transport within the delta layer and to two differing conduction paths in the i-layers adjoining the delta layer. For transport in the i-layers, thermal trapping/detrapping processes can be observed, and only at the highest temperature investigated (673 K) can transport due to a single conduction process be seen. Impedance spectroscopy is an ideal nondestructive tool for investigating the electrical characteristics of complex diamond structures.

Original language	English
Article number	052107
Pages (from-to)	052107
Number of pages	1
Journal	Applied Physics Letters
Volume	94
Issue number	5
DOIs	https://doi.org/10.1063/1.3075860
Publication status	Published - 2 Feb 2009

Keywords

boron
diamond
electrical conductivity
elemental semiconductors
multilayers

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10.1063/1.3075860

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title = "Multiple conduction paths in boron δ-doped diamond structures",

abstract = "Impedance spectroscopy has been used to investigate conductivity within boron-doped diamond in an intrinsic/delta-doped/intrinsic (i-d-i) multilayer structure. For a 5 nm thick delta layer, three conduction pathways are observed, which can be assigned to transport within the delta layer and to two differing conduction paths in the i-layers adjoining the delta layer. For transport in the i-layers, thermal trapping/detrapping processes can be observed, and only at the highest temperature investigated (673 K) can transport due to a single conduction process be seen. Impedance spectroscopy is an ideal nondestructive tool for investigating the electrical characteristics of complex diamond structures.",

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AU - Tumilty, Niall

AU - Welch, Joseph

AU - Ye, Haitao

AU - Wort, Christopher

AU - Lang, Richard

AU - Balmer, Richard S.

AU - Jackman, Richard B.

PY - 2009/2/2

Y1 - 2009/2/2

N2 - Impedance spectroscopy has been used to investigate conductivity within boron-doped diamond in an intrinsic/delta-doped/intrinsic (i-d-i) multilayer structure. For a 5 nm thick delta layer, three conduction pathways are observed, which can be assigned to transport within the delta layer and to two differing conduction paths in the i-layers adjoining the delta layer. For transport in the i-layers, thermal trapping/detrapping processes can be observed, and only at the highest temperature investigated (673 K) can transport due to a single conduction process be seen. Impedance spectroscopy is an ideal nondestructive tool for investigating the electrical characteristics of complex diamond structures.

AB - Impedance spectroscopy has been used to investigate conductivity within boron-doped diamond in an intrinsic/delta-doped/intrinsic (i-d-i) multilayer structure. For a 5 nm thick delta layer, three conduction pathways are observed, which can be assigned to transport within the delta layer and to two differing conduction paths in the i-layers adjoining the delta layer. For transport in the i-layers, thermal trapping/detrapping processes can be observed, and only at the highest temperature investigated (673 K) can transport due to a single conduction process be seen. Impedance spectroscopy is an ideal nondestructive tool for investigating the electrical characteristics of complex diamond structures.

KW - boron

KW - diamond

KW - electrical conductivity

KW - elemental semiconductors

KW - multilayers

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DO - 10.1063/1.3075860

M3 - Article

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VL - 94

SP - 052107

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 5

M1 - 052107

ER -

Multiple conduction paths in boron δ-doped diamond structures

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