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New tapered quantum-dot mode-locked laser diode with high peak power, low divergence and good beam quality

  • M. Ruiz
  • , N. Michel
  • , M. Calligaro
  • , Y. Robert
  • , M. Krakowski
  • , D. I. Nikitichev
  • , M. A. Cataluna
  • , D. Livshits
  • , E. U. Rafailov

Research output: Chapter in Book/Published conference outputConference publication

Abstract

With a fully gain guided quantum-dot tapered laser diode we demonstrate stable low beam divergence, high beam quality together with a record peak power of 2.6W under passive mode locking.
Original languageEnglish
Title of host publication22nd IEEE International Semiconductor Laser Conference
PublisherIEEE
ISBN (Electronic)978-1-4244-5684-0
ISBN (Print)978-1-4244-5683-3
DOIs
Publication statusPublished - 22 Nov 2010
Event22nd IEEE International Semiconductor Laser Conference (ISLC) - Kyoto , Japan
Duration: 26 Sept 201030 Sept 2010

Conference

Conference22nd IEEE International Semiconductor Laser Conference (ISLC)
Country/TerritoryJapan
CityKyoto
Period26/09/1030/09/10

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