Observation of Trapping and Release of Carriers in InGaAs/GaAs Quantum Dots by Ultrafast THz Spectroscopy

Henrik Porte; Peter Uhd Jepsen; Nart Daghestani; Edik Rafailov; Dmitry Turchinovich

doi:10.1109/LEOS.2009.5343415

Observation of Trapping and Release of Carriers in InGaAs/GaAs Quantum Dots by Ultrafast THz Spectroscopy

Henrik Porte, Peter Uhd Jepsen, Nart Daghestani, Edik Rafailov, Dmitry Turchinovich

Aston Institute of Photonic Technologies (AiPT)

Research output: Chapter in Book/Published conference output › Conference publication

Abstract

Depending on the photoexcitation wavelength, we either observe the trapping of the free carriers into quantum dots, or release of carriers from quantum dot ground state into conducting states of the quantum dot sample.

Original language	English
Title of host publication	2009 Ieee Leos Annual Meeting Conference Proceedings, Vols 1and 2
Publisher	IEEE
ISBN (Print)	978-1-4244-3680-4
DOIs	https://doi.org/10.1109/LEOS.2009.5343415
Publication status	Published - 2009

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10.1109/LEOS.2009.5343415

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@inproceedings{6e757a33a62f46e5a8fc7f0437f33c28,

title = "Observation of Trapping and Release of Carriers in InGaAs/GaAs Quantum Dots by Ultrafast THz Spectroscopy",

abstract = "Depending on the photoexcitation wavelength, we either observe the trapping of the free carriers into quantum dots, or release of carriers from quantum dot ground state into conducting states of the quantum dot sample.",

author = "Henrik Porte and Jepsen, {Peter Uhd} and Nart Daghestani and Edik Rafailov and Dmitry Turchinovich",

year = "2009",

doi = "10.1109/LEOS.2009.5343415",

language = "English",

isbn = "978-1-4244-3680-4",

booktitle = "2009 Ieee Leos Annual Meeting Conference Proceedings, Vols 1and 2",

publisher = "IEEE",

address = "United States",

}

TY - GEN

T1 - Observation of Trapping and Release of Carriers in InGaAs/GaAs Quantum Dots by Ultrafast THz Spectroscopy

AU - Porte, Henrik

AU - Jepsen, Peter Uhd

AU - Daghestani, Nart

AU - Rafailov, Edik

AU - Turchinovich, Dmitry

PY - 2009

Y1 - 2009

N2 - Depending on the photoexcitation wavelength, we either observe the trapping of the free carriers into quantum dots, or release of carriers from quantum dot ground state into conducting states of the quantum dot sample.

AB - Depending on the photoexcitation wavelength, we either observe the trapping of the free carriers into quantum dots, or release of carriers from quantum dot ground state into conducting states of the quantum dot sample.

UR - http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000279577600321&KeyUID=WOS:000279577600321

UR - https://ieeexplore.ieee.org/document/5343415

U2 - 10.1109/LEOS.2009.5343415

DO - 10.1109/LEOS.2009.5343415

M3 - Conference publication

SN - 978-1-4244-3680-4

BT - 2009 Ieee Leos Annual Meeting Conference Proceedings, Vols 1and 2

PB - IEEE

ER -

Observation of Trapping and Release of Carriers in InGaAs/GaAs Quantum Dots by Ultrafast THz Spectroscopy

Abstract

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