Photoconductive antennas deposited onto GaAs substrates that incorporate InAs quantum dots have been recently shown to efficiently generate both pulsed and CW terahertz radiation. In this Letter, we determine the operational limits of these antennas and demonstrate their extreme thermal breakdown tolerance. Implanted quantum dots serve as free carrier capture sites, thus acting as lifetime shorteners, similar to defects in low-temperature grown substrates. However, unlike the latter, defect-free quantum-dot structures possess perfect lattice quality, thus not compromising high carrier mobility and pump intensity stealth. Single gap design quantum dot based photoconductive antennas are shown to operate under up to 1 W of average pump power (∼1.6 mJ cm−2 energy density), which is more than 20 times higher than the pumping limit of low-temperature grown GaAs based substrates. Conversion efficiency of the quantum dot based photoconductive antennas does not saturate up to 0.75 W of pump power (∼1.1 mJ cm−2 energy density). Such a thermal tolerance suggests a glowy prospect for the proposed antennas as a perspective candidate for intracavity optical-to-terahertz converters.
Bibliographical noteCopyright © (2021) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Andrei Gorodetsky, Ivo T. Leite, and Edik U. Rafailov , (2021), "Operation of quantum dot based terahertz photoconductive antennas under extreme pumping conditions", Appl. Phys. Lett. 119, 111102 (2021) and may be found at https://aip.scitation.org/doi/10.1063/5.0062720
Funding: This project has received funding from Engineering and
Physical Sciences Research Council (EPSRC), Grant No. EP/
- quantum dots
- terahertz radiation
- crystal lattices