Abstract
We demonstrate an optically pumped semiconductor disk laser using 39 layers of Stranski–Krastanov InGaAs quantum dots self-assembled during epitaxial growth on a monolithic GaAs⁄AlAs distributed Bragg reflector. The gain structure bonded to an intracavity diamond crystal heat spreader allows 1.75 W single-transverse-mode output (푀2<1.2) with circular beam shape operating at 1180 nm in a disk laser geometry.
Original language | English |
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Pages (from-to) | 694-696 |
Journal | Optics Letters |
Volume | 35 |
Issue number | 5 |
DOIs | |
Publication status | Published - 2010 |