Photoconductivity of an InAs/GaAs self-assembled quantum dot photoconductive THz antenna

Amit Yadav, Andrei Gorodetsky, Eugene Avrutin, Ksenia A. Fedorova, Edik U. Rafailov

Research output: Chapter in Book/Published conference outputConference publication

Abstract

A broadband terahertz (THz) source is desirable for applications such as imaging, spectroscopy and security. Towards this, an InAs/GaAs quantum dot (QD) based photoconductive antenna (PCA) is a promising and compact solution for THz generation. Coherent THz radiation in the pulsed and the CW regime has been generated with a QD PCA under a resonant and off-resonant pumps [1, 2]. While photoconductivity of QD materials in mid- and far-IR at lower temperatures has been studied for cryogenic sensors and attributed to interlevel transitions, near-IE interband photoconductivity needs further investigation [3, 4]. In this work, we report on the photoconductive properties of an InAs/GaAs QD PCA pumped by a broadly-tunable InAs/GaAs QD external-cavity diode laser.
Original languageEnglish
Title of host publicationThe European Conference on Lasers and Electro-Optics, CLEO_Europe 2017
VolumePart F82-CLEO_Europe 2017
ISBN (Electronic)9781557528209
DOIs
Publication statusPublished - 29 Jun 2017
EventThe European Conference on Lasers and Electro-Optics, CLEO_Europe 2017 - Munich, Germany
Duration: 25 Jun 201729 Jun 2017

Conference

ConferenceThe European Conference on Lasers and Electro-Optics, CLEO_Europe 2017
CountryGermany
CityMunich
Period25/06/1729/06/17

Bibliographical note

© 2017 Optical Society of America. One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this paper for a fee or for commercial purposes, or modifications of the content of this paper are prohibited.

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