A broadband terahertz (THz) source is desirable for applications such as imaging, spectroscopy and security. Towards this, an InAs/GaAs quantum dot (QD) based photoconductive antenna (PCA) is a promising and compact solution for THz generation. Coherent THz radiation in the pulsed and the CW regime has been generated with a QD PCA under a resonant and off-resonant pumps [1, 2]. While photoconductivity of QD materials in mid- and far-IR at lower temperatures has been studied for cryogenic sensors and attributed to interlevel transitions, near-IE interband photoconductivity needs further investigation [3, 4]. In this work, we report on the photoconductive properties of an InAs/GaAs QD PCA pumped by a broadly-tunable InAs/GaAs QD external-cavity diode laser.
|Title of host publication||The European Conference on Lasers and Electro-Optics, CLEO_Europe 2017|
|Volume||Part F82-CLEO_Europe 2017|
|Publication status||Published - 29 Jun 2017|
|Event||The European Conference on Lasers and Electro-Optics, CLEO_Europe 2017 - Munich, Germany|
Duration: 25 Jun 2017 → 29 Jun 2017
|Conference||The European Conference on Lasers and Electro-Optics, CLEO_Europe 2017|
|Period||25/06/17 → 29/06/17|