Photoconductivity of an InAs/GaAs self-assembled quantum dot photoconductive THz antenna

Amit Yadav; Andrei Gorodetsky; Eugene Avrutin; Ksenia A. Fedorova; Edik U. Rafailov

doi:10.1109/CLEOE-EQEC.2017.8086621

Photoconductivity of an InAs/GaAs self-assembled quantum dot photoconductive THz antenna

Amit Yadav, Andrei Gorodetsky, Eugene Avrutin, Ksenia A. Fedorova, Edik U. Rafailov

Aston Institute of Photonic Technologies (AiPT)

Research output: Chapter in Book/Published conference output › Conference publication

Abstract

A broadband terahertz (THz) source is desirable for applications such as imaging, spectroscopy and security. Towards this, an InAs/GaAs quantum dot (QD) based photoconductive antenna (PCA) is a promising and compact solution for THz generation. Coherent THz radiation in the pulsed and the CW regime has been generated with a QD PCA under a resonant and off-resonant pumps [1, 2]. While photoconductivity of QD materials in mid- and far-IR at lower temperatures has been studied for cryogenic sensors and attributed to interlevel transitions, near-IE interband photoconductivity needs further investigation [3, 4]. In this work, we report on the photoconductive properties of an InAs/GaAs QD PCA pumped by a broadly-tunable InAs/GaAs QD external-cavity diode laser.

Original language	English
Title of host publication	The European Conference on Lasers and Electro-Optics, CLEO_Europe 2017
Volume	Part F82-CLEO_Europe 2017
ISBN (Electronic)	9781557528209
DOIs	https://doi.org/10.1109/CLEOE-EQEC.2017.8086621
Publication status	Published - 29 Jun 2017
Event	The European Conference on Lasers and Electro-Optics, CLEO_Europe 2017 - Munich, Germany Duration: 25 Jun 2017 → 29 Jun 2017

Conference

Conference	The European Conference on Lasers and Electro-Optics, CLEO_Europe 2017
Country/Territory	Germany
City	Munich
Period	25/06/17 → 29/06/17

Bibliographical note

© 2017 Optical Society of America. One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this paper for a fee or for commercial purposes, or modifications of the content of this paper are prohibited.

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10.1109/CLEOE-EQEC.2017.8086621

Photoconductivity of an InAs-GaAs self-assembled quantum dot photoconductive THz antenna (002)
© 2017 Optical Society of America. One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this paper for a fee or for commercial purposes, or modifications of the content of this paper are prohibited.
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Cite this

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Yadav, A, Gorodetsky, A, Avrutin, E, Fedorova, KA & Rafailov, EU 2017, Photoconductivity of an InAs/GaAs self-assembled quantum dot photoconductive THz antenna. in The European Conference on Lasers and Electro-Optics, CLEO_Europe 2017. vol. Part F82-CLEO_Europe 2017, The European Conference on Lasers and Electro-Optics, CLEO_Europe 2017, Munich, Germany, 25/06/17. https://doi.org/10.1109/CLEOE-EQEC.2017.8086621

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AU - Rafailov, Edik U.

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N2 - A broadband terahertz (THz) source is desirable for applications such as imaging, spectroscopy and security. Towards this, an InAs/GaAs quantum dot (QD) based photoconductive antenna (PCA) is a promising and compact solution for THz generation. Coherent THz radiation in the pulsed and the CW regime has been generated with a QD PCA under a resonant and off-resonant pumps [1, 2]. While photoconductivity of QD materials in mid- and far-IR at lower temperatures has been studied for cryogenic sensors and attributed to interlevel transitions, near-IE interband photoconductivity needs further investigation [3, 4]. In this work, we report on the photoconductive properties of an InAs/GaAs QD PCA pumped by a broadly-tunable InAs/GaAs QD external-cavity diode laser.

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Photoconductivity of an InAs/GaAs self-assembled quantum dot photoconductive THz antenna

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