Photoelectric signal conversion in deep p-n junction for detection of carbon nanotubes with adsorbed SDBS in aqueous solution

A.I. Manilov, A.V. Kozinetz, I.V. Gavrilchenko, Y.S. Milovanov, T.M. Mukhamedzhanov, S.A. Alekseev, M. Al Araimi, S.V. Litvinenko, A. Rozhin, V.A. Skryshevsky

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The possibility of using the principle of photoelectric conversion in structures with a deep p-n junction to control the content of carbon nanotubes with adsorbed surfactant (SDBS) in an aqueous solution was shown. Experimental studies of the analyte influence on the change in the photocurrent through a deep p-n junction were carried out. A shift in the dependence of the photocurrent on the voltage applied to the surface of the sensor structure due to the presence of carbon nanotubes in the solution was recorded. The change in the effective recombination rate, which corresponds to the distribution of the photocurrent at the surface, can be attributed to a change in the near-surface band bending.

Original languageUkrainian
Article number04020
JournalJournal of Nano- and Electronic Physics
Issue number4
Publication statusPublished - 27 Jul 2017


  • carbon nanoparticles
  • deep p-n junction
  • photocurrent
  • sensor
  • surface recombination rate

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