Photoinduced Absorption Saturation Dynamics of InGaAs Quantum Dot Structure Dedicated for Wavelength 1070 nm

Edgaras Jelmakas; Roland Tomasiunas; Edik Rafailov; Igor Krestnikov

doi:10.1109/ICTON.2010.5548985

Photoinduced Absorption Saturation Dynamics of InGaAs Quantum Dot Structure Dedicated for Wavelength 1070 nm

Edgaras Jelmakas
, Roland Tomasiunas
, Edik Rafailov
, Igor Krestnikov

Aston Institute of Photonic Technologies (AiPT)

Research output: Chapter in Book/Published conference output › Chapter

2 Citations (Scopus)

Abstract

In this paper, results of investigation of InGaAs quantum dot structure designed as a semiconductor saturable absorber for near-IR are presented. Photoinduced absorption bleaching spectroscopy performed confirm the dedicated wavelength 1070 nm for absorption bleaching of the ground state of quantum dots. Transitions including states from the wetting layer and the ground states have been interpreted to define absorption recovery dynamics on femto- and picosecond time scale. Fast recovery time of absorption was measured for the upper excited energy levels, while the ground state dynamics show relative longer times. Non-degenerate pump-probe technique was applied to investigate the interstate transition dynamics.

Original language	English
Title of host publication	2010 12th International Conference on Transparent Optical Networks (Icton)
Publisher	IEEE
ISBN (Electronic)	978-1-4244-7798-2, 978-1-4244-7797-5
ISBN (Print)	978-1-4244-7799-9
DOIs	https://doi.org/10.1109/ICTON.2010.5548985
Publication status	Published - 16 Aug 2010
Event	2010 12th International Conference on Transparent Optical Networks, ICTON 2010 - Munich, Germany Duration: 27 Jun 2010 → 1 Jul 2010

Conference

Conference	2010 12th International Conference on Transparent Optical Networks, ICTON 2010
Country/Territory	Germany
City	Munich
Period	27/06/10 → 1/07/10

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10.1109/ICTON.2010.5548985

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title = "Photoinduced Absorption Saturation Dynamics of InGaAs Quantum Dot Structure Dedicated for Wavelength 1070 nm",

abstract = "In this paper, results of investigation of InGaAs quantum dot structure designed as a semiconductor saturable absorber for near-IR are presented. Photoinduced absorption bleaching spectroscopy performed confirm the dedicated wavelength 1070 nm for absorption bleaching of the ground state of quantum dots. Transitions including states from the wetting layer and the ground states have been interpreted to define absorption recovery dynamics on femto- and picosecond time scale. Fast recovery time of absorption was measured for the upper excited energy levels, while the ground state dynamics show relative longer times. Non-degenerate pump-probe technique was applied to investigate the interstate transition dynamics.",

author = "Edgaras Jelmakas and Roland Tomasiunas and Edik Rafailov and Igor Krestnikov",

year = "2010",

month = aug,

day = "16",

doi = "10.1109/ICTON.2010.5548985",

language = "English",

isbn = "978-1-4244-7799-9",

booktitle = "2010 12th International Conference on Transparent Optical Networks (Icton)",

publisher = "IEEE",

address = "United States",

note = "2010 12th International Conference on Transparent Optical Networks, ICTON 2010 ; Conference date: 27-06-2010 Through 01-07-2010",

}

Jelmakas, E, Tomasiunas, R, Rafailov, E & Krestnikov, I 2010, Photoinduced Absorption Saturation Dynamics of InGaAs Quantum Dot Structure Dedicated for Wavelength 1070 nm. in 2010 12th International Conference on Transparent Optical Networks (Icton). IEEE, 2010 12th International Conference on Transparent Optical Networks, ICTON 2010, Munich, Germany, 27/06/10. https://doi.org/10.1109/ICTON.2010.5548985

TY - CHAP

T1 - Photoinduced Absorption Saturation Dynamics of InGaAs Quantum Dot Structure Dedicated for Wavelength 1070 nm

AU - Jelmakas, Edgaras

AU - Tomasiunas, Roland

AU - Rafailov, Edik

AU - Krestnikov, Igor

PY - 2010/8/16

Y1 - 2010/8/16

N2 - In this paper, results of investigation of InGaAs quantum dot structure designed as a semiconductor saturable absorber for near-IR are presented. Photoinduced absorption bleaching spectroscopy performed confirm the dedicated wavelength 1070 nm for absorption bleaching of the ground state of quantum dots. Transitions including states from the wetting layer and the ground states have been interpreted to define absorption recovery dynamics on femto- and picosecond time scale. Fast recovery time of absorption was measured for the upper excited energy levels, while the ground state dynamics show relative longer times. Non-degenerate pump-probe technique was applied to investigate the interstate transition dynamics.

AB - In this paper, results of investigation of InGaAs quantum dot structure designed as a semiconductor saturable absorber for near-IR are presented. Photoinduced absorption bleaching spectroscopy performed confirm the dedicated wavelength 1070 nm for absorption bleaching of the ground state of quantum dots. Transitions including states from the wetting layer and the ground states have been interpreted to define absorption recovery dynamics on femto- and picosecond time scale. Fast recovery time of absorption was measured for the upper excited energy levels, while the ground state dynamics show relative longer times. Non-degenerate pump-probe technique was applied to investigate the interstate transition dynamics.

UR - http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000307108000052&KeyUID=WOS:000307108000052

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U2 - 10.1109/ICTON.2010.5548985

DO - 10.1109/ICTON.2010.5548985

M3 - Chapter

SN - 978-1-4244-7799-9

BT - 2010 12th International Conference on Transparent Optical Networks (Icton)

PB - IEEE

T2 - 2010 12th International Conference on Transparent Optical Networks, ICTON 2010

Y2 - 27 June 2010 through 1 July 2010

ER -

Photoinduced Absorption Saturation Dynamics of InGaAs Quantum Dot Structure Dedicated for Wavelength 1070 nm

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