Photoinduced Transmittance at 1250 nm of InAs/InGaAs Quantum Dot Based Semiconductor Optical Amplifier Measured via Waveguiding Configuration

E. Jelmakas, R. Tomasiunas, M. Vengris, E. Rafailov, I. Krestnikov

Research output: Chapter in Book/Published conference outputConference publication

Abstract

New results on investigation of InAs/InGaAs quantum dot structure designed as a waveguide are presented. Photoinduced transmission and absorption recovery measurements using femtosecond pump-probe experiment in a waveguiding configuration, when exciting/probing from the edge of waveguide, were performed at a dedicated wavelength 1250 nm covering the ground state levels of a group of chirped quantum dots. The results of absorption saturation fit well electroluminescence results giving qualitative insight about density of states. From the absorption recovery kinetics picosecond lifetimes for the ground state were considered.
Original languageEnglish
Title of host publication2011 13th International Conference on Transparent Optical Networks
PublisherIEEE
ISBN (Electronic)978-1-4577-0882-4, 978-1-4577-0880-0
ISBN (Print)978-1-4577-0881-7
DOIs
Publication statusPublished - 1 Aug 2011
Event2011 13th International Conference on Transparent Optical Networks, ICTON 2011 - Stockholm, Sweden
Duration: 26 Jun 201130 Jun 2011

Publication series

Name2011 13th International Conference on Transparent Optical Networks (Icton)
PublisherIEEE
ISSN (Print)2162-7339
ISSN (Electronic)2161-2064

Conference

Conference2011 13th International Conference on Transparent Optical Networks, ICTON 2011
Country/TerritorySweden
CityStockholm
Period26/06/1130/06/11

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