Lead telluride (PbTe) possesses a good performance as a thermoelectric material due to both a low thermal conductivity and its electrical properties. It has peak thermoelectric characteristics at high temperature and is widely used in spacecraft power applications and as a waveguide-integrated detector monolithically integrated on a silicon substrate and operating at room temperature. In this work PbTe thin films were prepared via direct plasma-chemical interaction of lead and tellurium vapors. Argon of high purity was also used as a career gas for precursors transport to the plasma zone and as a plasma feed gas. The process was carried out at the low pressure (0.01 Torr) in inductively coupled non-equilibrium RF (40.68 MHz) plasma discharge. Optical emission spectroscopy (OES) was used to identify the exited species and to assume the possible mechanisms of plasma-chemical reactions. The stoichiometry, structure and morphology of the surface of the materials obtained was also studied by deferent analytical techniques dependently on the conditions of the plasma process.
|Title of host publication||2020 22nd International Conference on Transparent Optical Networks, ICTON 2020|
|Publication status||Published - 22 Sep 2020|
|Event||22nd International Conference on Transparent Optical Networks, ICTON 2020 - Bari, Italy|
Duration: 19 Jul 2020 → 23 Jul 2020
|Name||International Conference on Transparent Optical Networks|
|Conference||22nd International Conference on Transparent Optical Networks, ICTON 2020|
|Period||19/07/20 → 23/07/20|
Bibliographical noteFunding Information:
The reported study was supported by Russian Science Foundation, grant ʋ 19-79-10124 «Development of scientific fundamentals of the plasma-chemical synthesis of new generation of the functional materials for the mid-IR range».
- Lead telluride
- Mid-IR detectors
- Plasma deposition