Preparation of PbTe thin films for high-sensitive Mid-IR photodetectors by PECVD

Leonid Mochalov; Alexander Logunov; Igor Prokhorov; Tatiana Sazanova; Sergey Zelentsov; Aleksander Knyazev; Nikolay Starostin; Aleksey Letnianchik; Edik Rafailov; Vladimir Vorotyntsev

doi:10.1109/ICTON51198.2020.9203325

Preparation of PbTe thin films for high-sensitive Mid-IR photodetectors by PECVD

Leonid Mochalov^*, Alexander Logunov, Igor Prokhorov, Tatiana Sazanova, Sergey Zelentsov, Aleksander Knyazev, Nikolay Starostin, Aleksey Letnianchik, Edik Rafailov, Vladimir Vorotyntsev

^*Corresponding author for this work

Aston Institute of Photonic Technologies (AiPT)

Research output: Chapter in Book/Published conference output › Conference publication

Abstract

Lead telluride (PbTe) possesses a good performance as a thermoelectric material due to both a low thermal conductivity and its electrical properties. It has peak thermoelectric characteristics at high temperature and is widely used in spacecraft power applications and as a waveguide-integrated detector monolithically integrated on a silicon substrate and operating at room temperature. In this work PbTe thin films were prepared via direct plasma-chemical interaction of lead and tellurium vapors. Argon of high purity was also used as a career gas for precursors transport to the plasma zone and as a plasma feed gas. The process was carried out at the low pressure (0.01 Torr) in inductively coupled non-equilibrium RF (40.68 MHz) plasma discharge. Optical emission spectroscopy (OES) was used to identify the exited species and to assume the possible mechanisms of plasma-chemical reactions. The stoichiometry, structure and morphology of the surface of the materials obtained was also studied by deferent analytical techniques dependently on the conditions of the plasma process.

Original language	English
Title of host publication	2020 22nd International Conference on Transparent Optical Networks, ICTON 2020
Publisher	IEEE
ISBN (Electronic)	9781728184234
DOIs	https://doi.org/10.1109/ICTON51198.2020.9203325
Publication status	Published - 22 Sept 2020
Event	22nd International Conference on Transparent Optical Networks, ICTON 2020 - Bari, Italy Duration: 19 Jul 2020 → 23 Jul 2020

Publication series

Name	International Conference on Transparent Optical Networks
Volume	2020-July
ISSN (Electronic)	2162-7339

Conference

Conference	22nd International Conference on Transparent Optical Networks, ICTON 2020
Country/Territory	Italy
City	Bari
Period	19/07/20 → 23/07/20

Bibliographical note

Funding Information:
The reported study was supported by Russian Science Foundation, grant ʋ 19-79-10124 «Development of scientific fundamentals of the plasma-chemical synthesis of new generation of the functional materials for the mid-IR range».

Keywords

Lead telluride
Mid-IR detectors
Nanostructures
Plasma deposition

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10.1109/ICTON51198.2020.9203325

Cite this

Mochalov, L., Logunov, A., Prokhorov, I., Sazanova, T., Zelentsov, S., Knyazev, A., Starostin, N., Letnianchik, A., Rafailov, E., & Vorotyntsev, V. (2020). Preparation of PbTe thin films for high-sensitive Mid-IR photodetectors by PECVD. In 2020 22nd International Conference on Transparent Optical Networks, ICTON 2020 Article 9203325 (International Conference on Transparent Optical Networks; Vol. 2020-July). IEEE. https://doi.org/10.1109/ICTON51198.2020.9203325

@inproceedings{269170f90b40466c83582a8676eaf452,

title = "Preparation of PbTe thin films for high-sensitive Mid-IR photodetectors by PECVD",

abstract = "Lead telluride (PbTe) possesses a good performance as a thermoelectric material due to both a low thermal conductivity and its electrical properties. It has peak thermoelectric characteristics at high temperature and is widely used in spacecraft power applications and as a waveguide-integrated detector monolithically integrated on a silicon substrate and operating at room temperature. In this work PbTe thin films were prepared via direct plasma-chemical interaction of lead and tellurium vapors. Argon of high purity was also used as a career gas for precursors transport to the plasma zone and as a plasma feed gas. The process was carried out at the low pressure (0.01 Torr) in inductively coupled non-equilibrium RF (40.68 MHz) plasma discharge. Optical emission spectroscopy (OES) was used to identify the exited species and to assume the possible mechanisms of plasma-chemical reactions. The stoichiometry, structure and morphology of the surface of the materials obtained was also studied by deferent analytical techniques dependently on the conditions of the plasma process. ",

keywords = "Lead telluride, Mid-IR detectors, Nanostructures, Plasma deposition",

author = "Leonid Mochalov and Alexander Logunov and Igor Prokhorov and Tatiana Sazanova and Sergey Zelentsov and Aleksander Knyazev and Nikolay Starostin and Aleksey Letnianchik and Edik Rafailov and Vladimir Vorotyntsev",

note = "Funding Information: The reported study was supported by Russian Science Foundation, grant ʋ 19-79-10124 «Development of scientific fundamentals of the plasma-chemical synthesis of new generation of the functional materials for the mid-IR range».; 22nd International Conference on Transparent Optical Networks, ICTON 2020 ; Conference date: 19-07-2020 Through 23-07-2020",

year = "2020",

month = sep,

day = "22",

doi = "10.1109/ICTON51198.2020.9203325",

language = "English",

series = "International Conference on Transparent Optical Networks",

publisher = "IEEE",

booktitle = "2020 22nd International Conference on Transparent Optical Networks, ICTON 2020",

address = "United States",

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Mochalov, L, Logunov, A, Prokhorov, I, Sazanova, T, Zelentsov, S, Knyazev, A, Starostin, N, Letnianchik, A, Rafailov, E & Vorotyntsev, V 2020, Preparation of PbTe thin films for high-sensitive Mid-IR photodetectors by PECVD. in 2020 22nd International Conference on Transparent Optical Networks, ICTON 2020., 9203325, International Conference on Transparent Optical Networks, vol. 2020-July, IEEE, 22nd International Conference on Transparent Optical Networks, ICTON 2020, Bari, Italy, 19/07/20. https://doi.org/10.1109/ICTON51198.2020.9203325

Preparation of PbTe thin films for high-sensitive Mid-IR photodetectors by PECVD. / Mochalov, Leonid; Logunov, Alexander; Prokhorov, Igor et al.
2020 22nd International Conference on Transparent Optical Networks, ICTON 2020. IEEE, 2020. 9203325 (International Conference on Transparent Optical Networks; Vol. 2020-July).

Research output: Chapter in Book/Published conference output › Conference publication

TY - GEN

T1 - Preparation of PbTe thin films for high-sensitive Mid-IR photodetectors by PECVD

AU - Mochalov, Leonid

AU - Logunov, Alexander

AU - Prokhorov, Igor

AU - Sazanova, Tatiana

AU - Zelentsov, Sergey

AU - Knyazev, Aleksander

AU - Starostin, Nikolay

AU - Letnianchik, Aleksey

AU - Rafailov, Edik

AU - Vorotyntsev, Vladimir

N1 - Funding Information: The reported study was supported by Russian Science Foundation, grant ʋ 19-79-10124 «Development of scientific fundamentals of the plasma-chemical synthesis of new generation of the functional materials for the mid-IR range».

PY - 2020/9/22

Y1 - 2020/9/22

N2 - Lead telluride (PbTe) possesses a good performance as a thermoelectric material due to both a low thermal conductivity and its electrical properties. It has peak thermoelectric characteristics at high temperature and is widely used in spacecraft power applications and as a waveguide-integrated detector monolithically integrated on a silicon substrate and operating at room temperature. In this work PbTe thin films were prepared via direct plasma-chemical interaction of lead and tellurium vapors. Argon of high purity was also used as a career gas for precursors transport to the plasma zone and as a plasma feed gas. The process was carried out at the low pressure (0.01 Torr) in inductively coupled non-equilibrium RF (40.68 MHz) plasma discharge. Optical emission spectroscopy (OES) was used to identify the exited species and to assume the possible mechanisms of plasma-chemical reactions. The stoichiometry, structure and morphology of the surface of the materials obtained was also studied by deferent analytical techniques dependently on the conditions of the plasma process.

AB - Lead telluride (PbTe) possesses a good performance as a thermoelectric material due to both a low thermal conductivity and its electrical properties. It has peak thermoelectric characteristics at high temperature and is widely used in spacecraft power applications and as a waveguide-integrated detector monolithically integrated on a silicon substrate and operating at room temperature. In this work PbTe thin films were prepared via direct plasma-chemical interaction of lead and tellurium vapors. Argon of high purity was also used as a career gas for precursors transport to the plasma zone and as a plasma feed gas. The process was carried out at the low pressure (0.01 Torr) in inductively coupled non-equilibrium RF (40.68 MHz) plasma discharge. Optical emission spectroscopy (OES) was used to identify the exited species and to assume the possible mechanisms of plasma-chemical reactions. The stoichiometry, structure and morphology of the surface of the materials obtained was also studied by deferent analytical techniques dependently on the conditions of the plasma process.

KW - Lead telluride

KW - Mid-IR detectors

KW - Nanostructures

KW - Plasma deposition

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UR - https://ieeexplore.ieee.org/document/9203325

U2 - 10.1109/ICTON51198.2020.9203325

DO - 10.1109/ICTON51198.2020.9203325

M3 - Conference publication

AN - SCOPUS:85092481604

T3 - International Conference on Transparent Optical Networks

BT - 2020 22nd International Conference on Transparent Optical Networks, ICTON 2020

PB - IEEE

T2 - 22nd International Conference on Transparent Optical Networks, ICTON 2020

Y2 - 19 July 2020 through 23 July 2020

ER -

Preparation of PbTe thin films for high-sensitive Mid-IR photodetectors by PECVD

Abstract

Publication series

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Bibliographical note

Keywords

Access to Document

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