Properties of the CuInS2surface and the effect of organic layers

A.B. Verbitskiǐ, YaI. Vertsimakha, P.N. Lutsyk, S.L. Studzinskiǐ, S. Bereznev, J. Kois

Research output: Contribution to journalArticle

Abstract

This study is devoted to the properties of the CuInS2 (CIS) surface and the effect of thin organic layers on them. The CIS layers under study feature photosensitivity in the range of 1.5–3 eV. A quadratic approximation of the long-wavelength edge of a spectral dependence of the photovoltage yields the band gap E g =1.46±0.02 eV. It is shown that the major contribution to the formation of the barrier near the CIS free surface is made by acceptor levels arranged higher than the CIS valence band top by ∼0.1 and ∼0.2 eV. As a polymeric layer is deposited onto the CIS free surface, the potential barrier height slightly decreases, while the carrier transport efficiency simultaneously increases. As an organic p-type semiconductor is deposited onto the CIS free surface, trapping centers are partially neutralized, and the carrier recombination rate on the CIS film surface decreases.
Original languageEnglish
Pages (from-to)197–201
JournalSemiconductors
Volume40
Issue number2
DOIs
Publication statusPublished - 1 Feb 2006

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p-type semiconductors
photosensitivity
photovoltages
organic semiconductors
trapping
valence
approximation
wavelengths

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Verbitskiǐ, A. B., Vertsimakha, Y., Lutsyk, P. N., Studzinskiǐ, S. L., Bereznev, S., & Kois, J. (2006). Properties of the CuInS2surface and the effect of organic layers. Semiconductors, 40(2), 197–201. https://doi.org/10.1134/S1063782606020163
Verbitskiǐ, A.B. ; Vertsimakha, YaI. ; Lutsyk, P.N. ; Studzinskiǐ, S.L. ; Bereznev, S. ; Kois, J. / Properties of the CuInS2surface and the effect of organic layers. In: Semiconductors. 2006 ; Vol. 40, No. 2. pp. 197–201.
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Verbitskiǐ, AB, Vertsimakha, Y, Lutsyk, PN, Studzinskiǐ, SL, Bereznev, S & Kois, J 2006, 'Properties of the CuInS2surface and the effect of organic layers', Semiconductors, vol. 40, no. 2, pp. 197–201. https://doi.org/10.1134/S1063782606020163

Properties of the CuInS2surface and the effect of organic layers. / Verbitskiǐ, A.B.; Vertsimakha, YaI.; Lutsyk, P.N.; Studzinskiǐ, S.L.; Bereznev, S.; Kois, J.

In: Semiconductors, Vol. 40, No. 2, 01.02.2006, p. 197–201.

Research output: Contribution to journalArticle

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Verbitskiǐ AB, Vertsimakha Y, Lutsyk PN, Studzinskiǐ SL, Bereznev S, Kois J. Properties of the CuInS2surface and the effect of organic layers. Semiconductors. 2006 Feb 1;40(2):197–201. https://doi.org/10.1134/S1063782606020163