Pump dependent carrier lifetimes in InAs/GaAs quantum dot photoconductive terahertz antenna structures

Andrei Gorodetsky; Natalia Bazieva; Edik U. Rafailov

doi:10.1063/1.5083798

Pump dependent carrier lifetimes in InAs/GaAs quantum dot photoconductive terahertz antenna structures

Andrei Gorodetsky^*, Natalia Bazieva, Edik U. Rafailov

^*Corresponding author for this work

Aston Institute of Photonic Technologies (AiPT)

Research output: Contribution to journal › Article › peer-review

Abstract

In this paper, we study the behavior of photoexcited carriers in GaAs wafers containing self-assembled InAs quantum dots (QDs). These samples were designed and grown to be employed as photoconductive antennae for terahertz (THz) generation. The implanted QDs serve to shorten the overall carrier lifetime and enable pumping with lasers operating at wavelengths between 1 μ m and 1.3 μ m. Optical pump-THz probe measurements reveal carrier lifetime shortening for higher pump powers in the unbiased antennae due to increased carrier capture via Auger relaxation. This phenomenon significantly broadens the THz spectra from QD-based PCAs and explains the increased THz intensity at higher frequencies presented earlier.

Original language	English
Article number	151606
Journal	Journal of Applied Physics
Volume	125
Issue number	15
Early online date	1 Apr 2019
DOIs	https://doi.org/10.1063/1.5083798
Publication status	Published - 21 Apr 2019

Bibliographical note

Published under license by AIP Publishing. J. Appl. Phys. 125, 151606 (2019). https://doi.org/10.1063/1.5083798

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10.1063/1.5083798

1.5083798
Published under license by AIP Publishing. J. Appl. Phys. 125, 151606 (2019). https://doi.org/10.1063/1.5083798
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title = "Pump dependent carrier lifetimes in InAs/GaAs quantum dot photoconductive terahertz antenna structures",

abstract = "In this paper, we study the behavior of photoexcited carriers in GaAs wafers containing self-assembled InAs quantum dots (QDs). These samples were designed and grown to be employed as photoconductive antennae for terahertz (THz) generation. The implanted QDs serve to shorten the overall carrier lifetime and enable pumping with lasers operating at wavelengths between 1 μ m and 1.3 μ m. Optical pump-THz probe measurements reveal carrier lifetime shortening for higher pump powers in the unbiased antennae due to increased carrier capture via Auger relaxation. This phenomenon significantly broadens the THz spectra from QD-based PCAs and explains the increased THz intensity at higher frequencies presented earlier.",

author = "Andrei Gorodetsky and Natalia Bazieva and Rafailov, {Edik U.}",

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Pump dependent carrier lifetimes in InAs/GaAs quantum dot photoconductive terahertz antenna structures

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