Abstract
In this paper, we study the behavior of photoexcited carriers in GaAs wafers containing self-assembled InAs quantum dots (QDs). These samples were designed and grown to be employed as photoconductive antennae for terahertz (THz) generation. The implanted QDs serve to shorten the overall carrier lifetime and enable pumping with lasers operating at wavelengths between 1 μ m and 1.3 μ m. Optical pump-THz probe measurements reveal carrier lifetime shortening for higher pump powers in the unbiased antennae due to increased carrier capture via Auger relaxation. This phenomenon significantly broadens the THz spectra from QD-based PCAs and explains the increased THz intensity at higher frequencies presented earlier.
| Original language | English |
|---|---|
| Article number | 151606 |
| Journal | Journal of Applied Physics |
| Volume | 125 |
| Issue number | 15 |
| Early online date | 1 Apr 2019 |
| DOIs | |
| Publication status | Published - 21 Apr 2019 |
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Bibliographical note
Published under license by AIP Publishing. J. Appl. Phys. 125, 151606 (2019). https://doi.org/10.1063/1.5083798Cite this
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Pump dependent carrier lifetimes in InAs/GaAs quantum dot photoconductive terahertz antenna structures. / Gorodetsky, Andrei; Bazieva, Natalia; Rafailov, Edik U.
In: Journal of Applied Physics, Vol. 125, No. 15, 151606, 21.04.2019.Research output: Contribution to journal › Article
TY - JOUR
T1 - Pump dependent carrier lifetimes in InAs/GaAs quantum dot photoconductive terahertz antenna structures
AU - Gorodetsky, Andrei
AU - Bazieva, Natalia
AU - Rafailov, Edik U.
N1 - Published under license by AIP Publishing. J. Appl. Phys. 125, 151606 (2019). https://doi.org/10.1063/1.5083798
PY - 2019/4/21
Y1 - 2019/4/21
N2 - In this paper, we study the behavior of photoexcited carriers in GaAs wafers containing self-assembled InAs quantum dots (QDs). These samples were designed and grown to be employed as photoconductive antennae for terahertz (THz) generation. The implanted QDs serve to shorten the overall carrier lifetime and enable pumping with lasers operating at wavelengths between 1 μ m and 1.3 μ m. Optical pump-THz probe measurements reveal carrier lifetime shortening for higher pump powers in the unbiased antennae due to increased carrier capture via Auger relaxation. This phenomenon significantly broadens the THz spectra from QD-based PCAs and explains the increased THz intensity at higher frequencies presented earlier.
AB - In this paper, we study the behavior of photoexcited carriers in GaAs wafers containing self-assembled InAs quantum dots (QDs). These samples were designed and grown to be employed as photoconductive antennae for terahertz (THz) generation. The implanted QDs serve to shorten the overall carrier lifetime and enable pumping with lasers operating at wavelengths between 1 μ m and 1.3 μ m. Optical pump-THz probe measurements reveal carrier lifetime shortening for higher pump powers in the unbiased antennae due to increased carrier capture via Auger relaxation. This phenomenon significantly broadens the THz spectra from QD-based PCAs and explains the increased THz intensity at higher frequencies presented earlier.
UR - http://www.scopus.com/inward/record.url?scp=85063777703&partnerID=8YFLogxK
U2 - 10.1063/1.5083798
DO - 10.1063/1.5083798
M3 - Article
AN - SCOPUS:85063777703
VL - 125
JO - Journal of Applied Physics
JF - Journal of Applied Physics
SN - 0021-8979
IS - 15
M1 - 151606
ER -