Pump dependent carrier lifetimes in InAs/GaAs quantum dot photoconductive terahertz antenna structures

Andrei Gorodetsky*, Natalia Bazieva, Edik U. Rafailov

*Corresponding author for this work

Research output: Contribution to journalArticle

Abstract

In this paper, we study the behavior of photoexcited carriers in GaAs wafers containing self-assembled InAs quantum dots (QDs). These samples were designed and grown to be employed as photoconductive antennae for terahertz (THz) generation. The implanted QDs serve to shorten the overall carrier lifetime and enable pumping with lasers operating at wavelengths between 1 μ m and 1.3 μ m. Optical pump-THz probe measurements reveal carrier lifetime shortening for higher pump powers in the unbiased antennae due to increased carrier capture via Auger relaxation. This phenomenon significantly broadens the THz spectra from QD-based PCAs and explains the increased THz intensity at higher frequencies presented earlier.

Original languageEnglish
Article number151606
JournalJournal of Applied Physics
Volume125
Issue number15
Early online date1 Apr 2019
DOIs
Publication statusPublished - 21 Apr 2019

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carrier lifetime
antennas
quantum dots
pumps
pumping
wafers
probes
wavelengths
lasers

Bibliographical note

Published under license by AIP Publishing. J. Appl. Phys. 125, 151606 (2019). https://doi.org/10.1063/1.5083798

Cite this

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Pump dependent carrier lifetimes in InAs/GaAs quantum dot photoconductive terahertz antenna structures. / Gorodetsky, Andrei; Bazieva, Natalia; Rafailov, Edik U.

In: Journal of Applied Physics, Vol. 125, No. 15, 151606, 21.04.2019.

Research output: Contribution to journalArticle

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