Pump dependent carrier lifetimes in InAs/GaAs quantum dot photoconductive terahertz antenna structures

Andrei Gorodetsky; Natalia Bazieva; Edik U. Rafailov

doi:10.1063/1.5083798

Pump dependent carrier lifetimes in InAs/GaAs quantum dot photoconductive terahertz antenna structures

Andrei Gorodetsky^*
, Natalia Bazieva
, Edik U. Rafailov

^*Corresponding author for this work

Aston Institute of Photonic Technologies (AiPT)

Research output: Contribution to journal › Article › peer-review

14 Citations (Scopus)

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Abstract

In this paper, we study the behavior of photoexcited carriers in GaAs wafers containing self-assembled InAs quantum dots (QDs). These samples were designed and grown to be employed as photoconductive antennae for terahertz (THz) generation. The implanted QDs serve to shorten the overall carrier lifetime and enable pumping with lasers operating at wavelengths between 1 μ m and 1.3 μ m. Optical pump-THz probe measurements reveal carrier lifetime shortening for higher pump powers in the unbiased antennae due to increased carrier capture via Auger relaxation. This phenomenon significantly broadens the THz spectra from QD-based PCAs and explains the increased THz intensity at higher frequencies presented earlier.

Original language	English
Article number	151606
Journal	Journal of Applied Physics
Volume	125
Issue number	15
Early online date	1 Apr 2019
DOIs	https://doi.org/10.1063/1.5083798
Publication status	Published - 21 Apr 2019

Bibliographical note

Published under license by AIP Publishing. J. Appl. Phys. 125, 151606 (2019). https://doi.org/10.1063/1.5083798

Funding

E.U.R. acknowledges support from Engineering and Physical Sciences Research Council (EPSRC) (Grant No. EP/R024898/1) and the Russian Science Foundation (Grant No. 18-15-00172). A.G. acknowledges support from the Russian Foundation for Basic Research (Research Project No. 18-07-01492a). The authors thank Dr. Edmund Clarke and Dr. Daniil Livshits for the sample growth; Mr. Thomas R. Hopper, Dr. Artemii Dmitriev, Dr. Alexander Krasnok, and Dr. Ivo Leite for fruitful discussions; A.G. thanks Magicplot Ltd. for providing a copy of MagicPlot Pro cross-platform plotting and fitting software that was used for preparation of all the figures in this paper.

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10.1063/1.5083798

1.5083798
Published under license by AIP Publishing. J. Appl. Phys. 125, 151606 (2019). https://doi.org/10.1063/1.5083798
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abstract = "In this paper, we study the behavior of photoexcited carriers in GaAs wafers containing self-assembled InAs quantum dots (QDs). These samples were designed and grown to be employed as photoconductive antennae for terahertz (THz) generation. The implanted QDs serve to shorten the overall carrier lifetime and enable pumping with lasers operating at wavelengths between 1 μ m and 1.3 μ m. Optical pump-THz probe measurements reveal carrier lifetime shortening for higher pump powers in the unbiased antennae due to increased carrier capture via Auger relaxation. This phenomenon significantly broadens the THz spectra from QD-based PCAs and explains the increased THz intensity at higher frequencies presented earlier.",

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Pump dependent carrier lifetimes in InAs/GaAs quantum dot photoconductive terahertz antenna structures

Abstract

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