TY - JOUR
T1 - Quantum well saturable absorber mirror with electrical control of modulation depth
AU - Liu, Xiaomin
AU - Rafailov, Edik U.
AU - Livshits, Daniil
AU - Turchinovich, Dmitry
PY - 2010/8/2
Y1 - 2010/8/2
N2 - We demonstrate a quantum well (QW) semiconductor saturable absorber mirror (SESAM) comprising low-temperature grown InGaAs/GaAs QWs incorporated into a p-i-n structure. By applying the reverse bias voltage in the range 0–2 V to the p-i-n structure, we were able to change the SESAM modulation depth in the range 2.5–0.5%, as measured by nonlinear reflectivity of 450 fs long laser pulses with 1065 nm central wavelength, in the pump fluence range 1.6–26.7 μJ/cm2. This electrical control of the modulation depth is achieved by controlling the small-signal loss of the SESAM via quantum-confined Stark effect in the QWs.
AB - We demonstrate a quantum well (QW) semiconductor saturable absorber mirror (SESAM) comprising low-temperature grown InGaAs/GaAs QWs incorporated into a p-i-n structure. By applying the reverse bias voltage in the range 0–2 V to the p-i-n structure, we were able to change the SESAM modulation depth in the range 2.5–0.5%, as measured by nonlinear reflectivity of 450 fs long laser pulses with 1065 nm central wavelength, in the pump fluence range 1.6–26.7 μJ/cm2. This electrical control of the modulation depth is achieved by controlling the small-signal loss of the SESAM via quantum-confined Stark effect in the QWs.
UR - http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000281059500003&KeyUID=WOS:000281059500003
UR - https://aip.scitation.org/doi/10.1063/1.3474799
U2 - 10.1063/1.3474799
DO - 10.1063/1.3474799
M3 - Article
SN - 0003-6951
VL - 97
JO - Applied Physics Letters
JF - Applied Physics Letters
M1 - 051103
ER -