Abstract
| Original language | English |
|---|---|
| Pages (from-to) | 220-228 |
| Number of pages | 9 |
| Journal | IEEE Transactions on Device and Materials Reliability |
| Volume | 14 |
| Issue number | 1 |
| Early online date | 22 Nov 2013 |
| DOIs | |
| Publication status | Published - Mar 2014 |
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Bibliographical note
© 2013 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.Keywords
- circuit topology
- converters
- monitoring
- MOSFET switches
- prognostics and health management
- reliability testing
- thermal management
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Real-time temperature estimation for power MOSFETs considering thermal ageing effects. / Chen, Huifeng; Ji, Bing; Pickert, Volker; Cao, Wenping.
In: IEEE Transactions on Device and Materials Reliability, Vol. 14, No. 1, 03.2014, p. 220-228.Research output: Contribution to journal › Article
TY - JOUR
T1 - Real-time temperature estimation for power MOSFETs considering thermal ageing effects
AU - Chen, Huifeng
AU - Ji, Bing
AU - Pickert, Volker
AU - Cao, Wenping
N1 - © 2013 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.
PY - 2014/3
Y1 - 2014/3
N2 - This paper presents a novel real-time power-device temperature estimation method that monitors the power MOSFET's junction temperature shift arising from thermal aging effects and incorporates the updated electrothermal models of power modules into digital controllers. Currently, the real-time estimator is emerging as an important tool for active control of device junction temperature as well as online health monitoring for power electronic systems, but its thermal model fails to address the device's ongoing degradation. Because of a mismatch of coefficients of thermal expansion between layers of power devices, repetitive thermal cycling will cause cracks, voids, and even delamination within the device components, particularly in the solder and thermal grease layers. Consequently, the thermal resistance of power devices will increase, making it possible to use thermal resistance (and junction temperature) as key indicators for condition monitoring and control purposes. In this paper, the predicted device temperature via threshold voltage measurements is compared with the real-time estimated ones, and the difference is attributed to the aging of the device. The thermal models in digital controllers are frequently updated to correct the shift caused by thermal aging effects. Experimental results on three power MOSFETs confirm that the proposed methodologies are effective to incorporate the thermal aging effects in the power-device temperature estimator with good accuracy. The developed adaptive technologies can be applied to other power devices such as IGBTs and SiC MOSFETs, and have significant economic implications.
AB - This paper presents a novel real-time power-device temperature estimation method that monitors the power MOSFET's junction temperature shift arising from thermal aging effects and incorporates the updated electrothermal models of power modules into digital controllers. Currently, the real-time estimator is emerging as an important tool for active control of device junction temperature as well as online health monitoring for power electronic systems, but its thermal model fails to address the device's ongoing degradation. Because of a mismatch of coefficients of thermal expansion between layers of power devices, repetitive thermal cycling will cause cracks, voids, and even delamination within the device components, particularly in the solder and thermal grease layers. Consequently, the thermal resistance of power devices will increase, making it possible to use thermal resistance (and junction temperature) as key indicators for condition monitoring and control purposes. In this paper, the predicted device temperature via threshold voltage measurements is compared with the real-time estimated ones, and the difference is attributed to the aging of the device. The thermal models in digital controllers are frequently updated to correct the shift caused by thermal aging effects. Experimental results on three power MOSFETs confirm that the proposed methodologies are effective to incorporate the thermal aging effects in the power-device temperature estimator with good accuracy. The developed adaptive technologies can be applied to other power devices such as IGBTs and SiC MOSFETs, and have significant economic implications.
KW - circuit topology
KW - converters
KW - monitoring
KW - MOSFET switches
KW - prognostics and health management
KW - reliability testing
KW - thermal management
U2 - 10.1109/TDMR.2013.2292547
DO - 10.1109/TDMR.2013.2292547
M3 - Article
VL - 14
SP - 220
EP - 228
JO - IEEE Transactions on Device and Materials Reliability
JF - IEEE Transactions on Device and Materials Reliability
SN - 1530-4388
IS - 1
ER -