Recent progress in distributed feedback InGaN/GaN laser diodes

Thomas J. Slight; Scott Watson; Shaun Viola; Amit Yadav; Szymon Stanczyk; Szymon Grzanka; Steffan Gwyn; Edik Rafailov; Piotr Perlin; Stephen P. Najda; Mike Leszczyński; Mohsin Haji; Anthony E. Kelly

doi:10.1117/12.2507630

Recent progress in distributed feedback InGaN/GaN laser diodes

Thomas J. Slight
, Scott Watson
, Shaun Viola
, Amit Yadav
, Szymon Stanczyk
, Szymon Grzanka
, Steffan Gwyn
, Edik Rafailov
, Piotr Perlin
, Stephen P. Najda
, Mike Leszczyński
, Mohsin Haji
, Anthony E. Kelly

Compound Semiconductor Technologies Global Ltd
University of Glasgow
Sokolowska
National Physical Laboratory

Research output: Contribution to journal › Conference article › peer-review

9 Citations (Scopus)

90 Downloads (Pure)

Abstract

Laser diodes based on Gallium Nitride (GaN) are useful devices in a wide range of applications including atomic spectroscopy, data storage and optical communications. To fully exploit some of these application areas there is a need for a GaN laser diode with high spectral purity, e.g. in atomic clocks, where a narrow linewidth blue laser source can be used to target the atomic cooling transition. We report on the continuous wave, room temperature operation of a distributed feedback laser diode (DFB-LD) with high-order notched gratings. The design, fabrication and characterization of DFB devices based on the (Al,In) GaN material system is described. A single peak emission at 408.6 nm with an optical power of 20 mW at 225 mA and a side mode suppression ratio (SMSR) of 35 dB was achieved. Additionally, we demonstrate the use of a GaN DFB-LD as a transmitter in visible optical communications system. We also present results from a DFB-LD optimized for laser cooling of Sr+.

Original language	English
Article number	109390I
Journal	Proceedings of SPIE - International Society for Optical Engineering
Volume	10939
DOIs	https://doi.org/10.1117/12.2507630
Publication status	Published - 1 Mar 2019
Event	Novel In-Plane Semiconductor Lasers XVIII 2019 - San Francisco, United States Duration: 4 Feb 2019 → 7 Feb 2019

Bibliographical note

Copyright 2019 SPIE. One print or electronic copy may be made for personal use only. Systematic reproduction, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper are prohibited.

Funding

Acknowledgements: This research has been supported by the European Union with grant E10509, Innovate UK through grant 132543, and by the National Centre for Research and Development (E10509/29/NCBR/2017 and 1/POLBER-3/2018 and project NCN-2013/11/B/ST3/04263).

Keywords

Distributed feedback laser diodes
GaN
Laser cooling
Lateral grating
Notched grating
Optical communications
Semiconductor lasers
Sidewall grating

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10.1117/12.2507630

Recent progress in distributed feedback InGaN/GaN laser diodes
Copyright 2019 SPIE. One print or electronic copy may be made for personal use only. Systematic reproduction, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper are prohibited.
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Cite this

@article{0a7cd45a80404d80ba8f4d2459c2779c,

title = "Recent progress in distributed feedback InGaN/GaN laser diodes",

abstract = "Laser diodes based on Gallium Nitride (GaN) are useful devices in a wide range of applications including atomic spectroscopy, data storage and optical communications. To fully exploit some of these application areas there is a need for a GaN laser diode with high spectral purity, e.g. in atomic clocks, where a narrow linewidth blue laser source can be used to target the atomic cooling transition. We report on the continuous wave, room temperature operation of a distributed feedback laser diode (DFB-LD) with high-order notched gratings. The design, fabrication and characterization of DFB devices based on the (Al,In) GaN material system is described. A single peak emission at 408.6 nm with an optical power of 20 mW at 225 mA and a side mode suppression ratio (SMSR) of 35 dB was achieved. Additionally, we demonstrate the use of a GaN DFB-LD as a transmitter in visible optical communications system. We also present results from a DFB-LD optimized for laser cooling of Sr+.",

keywords = "Distributed feedback laser diodes, GaN, Laser cooling, Lateral grating, Notched grating, Optical communications, Semiconductor lasers, Sidewall grating",

author = "Slight, \{Thomas J.\} and Scott Watson and Shaun Viola and Amit Yadav and Szymon Stanczyk and Szymon Grzanka and Steffan Gwyn and Edik Rafailov and Piotr Perlin and Najda, \{Stephen P.\} and Mike Leszczy{\'n}ski and Mohsin Haji and Kelly, \{Anthony E.\}",

note = "Copyright 2019 SPIE. One print or electronic copy may be made for personal use only. Systematic reproduction, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper are prohibited. ; Novel In-Plane Semiconductor Lasers XVIII 2019 ; Conference date: 04-02-2019 Through 07-02-2019",

year = "2019",

month = mar,

day = "1",

doi = "10.1117/12.2507630",

language = "English",

volume = "10939",

journal = "Proceedings of SPIE - International Society for Optical Engineering",

issn = "0277-786X",

publisher = "Society of Photo-Optical Instrumentation Engineers (SPIE)",

}

TY - JOUR

T1 - Recent progress in distributed feedback InGaN/GaN laser diodes

AU - Slight, Thomas J.

AU - Watson, Scott

AU - Viola, Shaun

AU - Yadav, Amit

AU - Stanczyk, Szymon

AU - Grzanka, Szymon

AU - Gwyn, Steffan

AU - Rafailov, Edik

AU - Perlin, Piotr

AU - Najda, Stephen P.

AU - Leszczyński, Mike

AU - Haji, Mohsin

AU - Kelly, Anthony E.

N1 - Copyright 2019 SPIE. One print or electronic copy may be made for personal use only. Systematic reproduction, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper are prohibited.

PY - 2019/3/1

Y1 - 2019/3/1

N2 - Laser diodes based on Gallium Nitride (GaN) are useful devices in a wide range of applications including atomic spectroscopy, data storage and optical communications. To fully exploit some of these application areas there is a need for a GaN laser diode with high spectral purity, e.g. in atomic clocks, where a narrow linewidth blue laser source can be used to target the atomic cooling transition. We report on the continuous wave, room temperature operation of a distributed feedback laser diode (DFB-LD) with high-order notched gratings. The design, fabrication and characterization of DFB devices based on the (Al,In) GaN material system is described. A single peak emission at 408.6 nm with an optical power of 20 mW at 225 mA and a side mode suppression ratio (SMSR) of 35 dB was achieved. Additionally, we demonstrate the use of a GaN DFB-LD as a transmitter in visible optical communications system. We also present results from a DFB-LD optimized for laser cooling of Sr+.

AB - Laser diodes based on Gallium Nitride (GaN) are useful devices in a wide range of applications including atomic spectroscopy, data storage and optical communications. To fully exploit some of these application areas there is a need for a GaN laser diode with high spectral purity, e.g. in atomic clocks, where a narrow linewidth blue laser source can be used to target the atomic cooling transition. We report on the continuous wave, room temperature operation of a distributed feedback laser diode (DFB-LD) with high-order notched gratings. The design, fabrication and characterization of DFB devices based on the (Al,In) GaN material system is described. A single peak emission at 408.6 nm with an optical power of 20 mW at 225 mA and a side mode suppression ratio (SMSR) of 35 dB was achieved. Additionally, we demonstrate the use of a GaN DFB-LD as a transmitter in visible optical communications system. We also present results from a DFB-LD optimized for laser cooling of Sr+.

KW - Distributed feedback laser diodes

KW - GaN

KW - Laser cooling

KW - Lateral grating

KW - Notched grating

KW - Optical communications

KW - Semiconductor lasers

KW - Sidewall grating

UR - https://www.scopus.com/pages/publications/85065640580

U2 - 10.1117/12.2507630

DO - 10.1117/12.2507630

M3 - Conference article

AN - SCOPUS:85065640580

SN - 0277-786X

VL - 10939

JO - Proceedings of SPIE - International Society for Optical Engineering

JF - Proceedings of SPIE - International Society for Optical Engineering

M1 - 109390I

T2 - Novel In-Plane Semiconductor Lasers XVIII 2019

Y2 - 4 February 2019 through 7 February 2019

ER -

Recent progress in distributed feedback InGaN/GaN laser diodes

Abstract

Bibliographical note

Funding

Keywords

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