Recognition of metallic and semiconductor single-wall carbon nanotubes using the photoelectric method

A.V. Kozinetz*, S.V. Litvinenko, B.B. Sus, A.I. Manilov, A.S. Topchylo, A. Rozhin, V.A. Skryshevsky

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review


An innovative application of deep barrier silicon structures for sensory devices with photoelectrical transformation has been suggested. The principal possibility of the photovoltaic transducer implementation for identification of metallic and semiconductor single-wall carbon nanotubes covered with surfactant in water solution was analyzed in detail. The obtained results are qualitatively explained by local electrostatic influence on the parameters of recombination centers at the silicon surface. This influence can be associated with the dipole moment of molecules absorbed at the surface of the nanotube from surfactant sodium dodecylbenzene sulfonate (SDBS). Moreover, the spatial configuration of charged fragments near the defects at the silicon surface can occur. Another possible reason for carbon nanotubes identification is due to the different polarizability of metallic and semiconductor nanotubes. These results are explained in the frame of Stevenson-Keyes's theory. The reported effect can be further applied as the basis for the control and selection of carbon nanotubes with different conductivity types.
Original languageEnglish
Article number113108
JournalSensors and Actuators A : physical
Issue numberPart 1
Early online date15 Sept 2021
Publication statusPublished - 1 Dec 2021

Bibliographical note

© 2021, Elsevier. Licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International

Funding: This work was supported by EU Horizon 2020 Research and Innovation Staff Exchange Programme (RISE) under Marie Sklodowska-Curie Action (project 690945 “Carther” and project 101008159 “UNAT”).


  • silicon surface
  • carbon nanotube composites
  • sensor application


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