Self-seeded gain-switched operation of an InGaN MQW laser diode

Youfang Hu; Mykhaylo Dubov; Igor Khrushchev

doi:10.1117/12.545446

Self-seeded gain-switched operation of an InGaN MQW laser diode

Youfang Hu, Mykhaylo Dubov, Igor Khrushchev

Aston Institute of Photonic Technologies (AiPT)

Research output: Chapter in Book/Published conference output › Conference publication

Abstract

Self-seeded, gain-switched operation of an InGaN multi-quantum-well laser diode has been demonstrated for the first time. An external cavity comprising Littrow geometry was implemented for spectral control of pulsed operation. The feedback was optimized by adjusting the external cavity length and the driving frequency of the laser. The generated pulses had a peak power in excess of 400mW, a pulse duration of 60ps, a spectral linewidth of 0.14nm and maximum side band suppression ratio of 20dB. It was tunable within the range of 3.6nm centered at a wavelength of 403nm.

Original language	English
Title of host publication	Semiconductor lasers and laser dynamics
Editors	Daan Lenstra, Geert Morthier, Thomas Erneux, Markus Pessa
Publisher	SPIE
Pages	625-627
Number of pages	3
DOIs	https://doi.org/10.1117/12.545446
Publication status	Published - 3 Sept 2004
Event	Semiconductor Lasers and Laser Dynamics , Proceedings of the Society of Photo-Optical Instrumentation Engineerings (SPIE-2004) - Strasbourg (FR) Duration: 27 Apr 2004 → …

Publication series

Name	SPIE proceedings
Publisher	SPIE
Volume	5452
ISSN (Print)	0277-786X

Conference

Conference	Semiconductor Lasers and Laser Dynamics , Proceedings of the Society of Photo-Optical Instrumentation Engineerings (SPIE-2004)
City	Strasbourg (FR)
Period	27/04/04 → …

Bibliographical note

Youfang Hu ; Michael Dubov and Igor Khrushchev, "Self-seeded gain-switched operation of an InGaN MQW laser diode", Proc. SPIE 5452, Semiconductor Lasers and Laser Dynamics, 625 (September 1, 2004); doi:10.1117/12.545446.

Copyright 2004 Society of Photo-Optical Instrumentation Engineers. One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper are prohibited.

http://dx.doi.org/10.1117/12.545446

Keywords

electric currents
gain control
resonance
semiconducting gallium arsenide
semiconducting indium compounds
semiconductor quantum wells
signal
external cavity
gain switching
InGaN
self seeding

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10.1117/12.545446

Self-seeded gain-switched operation
Youfang Hu ; Michael Dubov and Igor Khrushchev, "Self-seeded gain-switched operation of an InGaN MQW laser diode", Proc. SPIE 5452, Semiconductor Lasers and Laser Dynamics, 625 (September 1, 2004); doi:10.1117/12.545446. Copyright 2004 Society of Photo-Optical Instrumentation Engineers. One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper are prohibited. http://dx.doi.org/10.1117/12.545446
Accepted author manuscript, 93.1 KB

Cite this

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title = "Self-seeded gain-switched operation of an InGaN MQW laser diode",

abstract = "Self-seeded, gain-switched operation of an InGaN multi-quantum-well laser diode has been demonstrated for the first time. An external cavity comprising Littrow geometry was implemented for spectral control of pulsed operation. The feedback was optimized by adjusting the external cavity length and the driving frequency of the laser. The generated pulses had a peak power in excess of 400mW, a pulse duration of 60ps, a spectral linewidth of 0.14nm and maximum side band suppression ratio of 20dB. It was tunable within the range of 3.6nm centered at a wavelength of 403nm.",

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Hu, Y, Dubov, M & Khrushchev, I 2004, Self-seeded gain-switched operation of an InGaN MQW laser diode. in D Lenstra, G Morthier, T Erneux & M Pessa (eds), Semiconductor lasers and laser dynamics. SPIE proceedings, vol. 5452, SPIE, pp. 625-627, Semiconductor Lasers and Laser Dynamics , Proceedings of the Society of Photo-Optical Instrumentation Engineerings (SPIE-2004), Strasbourg (FR), 27/04/04. https://doi.org/10.1117/12.545446

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N2 - Self-seeded, gain-switched operation of an InGaN multi-quantum-well laser diode has been demonstrated for the first time. An external cavity comprising Littrow geometry was implemented for spectral control of pulsed operation. The feedback was optimized by adjusting the external cavity length and the driving frequency of the laser. The generated pulses had a peak power in excess of 400mW, a pulse duration of 60ps, a spectral linewidth of 0.14nm and maximum side band suppression ratio of 20dB. It was tunable within the range of 3.6nm centered at a wavelength of 403nm.

AB - Self-seeded, gain-switched operation of an InGaN multi-quantum-well laser diode has been demonstrated for the first time. An external cavity comprising Littrow geometry was implemented for spectral control of pulsed operation. The feedback was optimized by adjusting the external cavity length and the driving frequency of the laser. The generated pulses had a peak power in excess of 400mW, a pulse duration of 60ps, a spectral linewidth of 0.14nm and maximum side band suppression ratio of 20dB. It was tunable within the range of 3.6nm centered at a wavelength of 403nm.

KW - electric currents

KW - gain control

KW - resonance

KW - semiconducting gallium arsenide

KW - semiconducting indium compounds

KW - semiconductor quantum wells

KW - signal

KW - external cavity

KW - gain switching

KW - InGaN

KW - self seeding

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A2 - Erneux, Thomas

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ER -

Self-seeded gain-switched operation of an InGaN MQW laser diode

Abstract

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Bibliographical note

Keywords

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