Self-seeded, gain-switched operation of an InGaN multi-quantum-well laser diode has been demonstrated for the first time. An external cavity comprising Littrow geometry was implemented for spectral control of pulsed operation. The feedback was optimized by adjusting the external cavity length and the driving frequency of the laser. The generated pulses had a peak power in excess of 400mW, a pulse duration of 60ps, a spectral linewidth of 0.14nm and maximum side band suppression ratio of 20dB. It was tunable within the range of 3.6nm centered at a wavelength of 403nm.
|Title of host publication||Semiconductor lasers and laser dynamics|
|Editors||Daan Lenstra, Geert Morthier, Thomas Erneux, Markus Pessa|
|Number of pages||3|
|Publication status||Published - 3 Sept 2004|
|Event||Semiconductor Lasers and Laser Dynamics , Proceedings of the Society of Photo-Optical Instrumentation Engineerings (SPIE-2004) - Strasbourg (FR)|
Duration: 27 Apr 2004 → …
|Conference||Semiconductor Lasers and Laser Dynamics , Proceedings of the Society of Photo-Optical Instrumentation Engineerings (SPIE-2004)|
|Period||27/04/04 → …|
Bibliographical noteYoufang Hu ; Michael Dubov and Igor Khrushchev, "Self-seeded gain-switched operation of an InGaN MQW laser diode", Proc. SPIE 5452, Semiconductor Lasers and Laser Dynamics, 625 (September 1, 2004); doi:10.1117/12.545446.
Copyright 2004 Society of Photo-Optical Instrumentation Engineers. One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper are prohibited.
- electric currents
- gain control
- semiconducting gallium arsenide
- semiconducting indium compounds
- semiconductor quantum wells
- external cavity
- gain switching
- self seeding