Separation of two distinct fast interface states at the (100)Si/SiO2 interface using the conductance technique

M.J. Uren, K.M. Brunson, A.M. Hodge

Research output: Contribution to journalArticle

Abstract

We have studied the annealing of fast and slow Si/SiO2 interface states generated by 10‐MeV electron irradiation using the conductance technique. The fast‐state conductance peak is shown to be separable into contributions from defects characterized by two different capture cross sections, densities of states, and annealing behaviors.  
Original languageEnglish
Pages (from-to)624-626
Number of pages3
JournalApplied Physics Letters
Volume60
Issue number5
DOIs
Publication statusPublished - Feb 1992

Fingerprint

annealing
electron irradiation
absorption cross sections
defects

Keywords

  • annealing
  • capture
  • defect states
  • electron beams
  • interface states
  • oxidation
  • physical radiation effects
  • si junctions
  • silicon

Cite this

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title = "Separation of two distinct fast interface states at the (100)Si/SiO2 interface using the conductance technique",
abstract = "We have studied the annealing of fast and slow Si/SiO2 interface states generated by 10‐MeV electron irradiation using the conductance technique. The fast‐state conductance peak is shown to be separable into contributions from defects characterized by two different capture cross sections, densities of states, and annealing behaviors.  ",
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author = "M.J. Uren and K.M. Brunson and A.M. Hodge",
year = "1992",
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language = "English",
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pages = "624--626",
journal = "Applied Physics Letters",
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}

Separation of two distinct fast interface states at the (100)Si/SiO2 interface using the conductance technique. / Uren, M.J.; Brunson, K.M.; Hodge, A.M.

In: Applied Physics Letters, Vol. 60, No. 5, 02.1992, p. 624-626.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Separation of two distinct fast interface states at the (100)Si/SiO2 interface using the conductance technique

AU - Uren, M.J.

AU - Brunson, K.M.

AU - Hodge, A.M.

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AB - We have studied the annealing of fast and slow Si/SiO2 interface states generated by 10‐MeV electron irradiation using the conductance technique. The fast‐state conductance peak is shown to be separable into contributions from defects characterized by two different capture cross sections, densities of states, and annealing behaviors.  

KW - annealing

KW - capture

KW - defect states

KW - electron beams

KW - interface states

KW - oxidation

KW - physical radiation effects

KW - si junctions

KW - silicon

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JO - Applied Physics Letters

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SN - 0003-6951

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