Separation of two distinct fast interface states at the (100)Si/SiO2 interface using the conductance technique

M.J. Uren, K.M. Brunson, A.M. Hodge

Research output: Contribution to journalArticle

Abstract

We have studied the annealing of fast and slow Si/SiO2 interface states generated by 10‐MeV electron irradiation using the conductance technique. The fast‐state conductance peak is shown to be separable into contributions from defects characterized by two different capture cross sections, densities of states, and annealing behaviors.  
Original languageEnglish
Pages (from-to)624-626
Number of pages3
JournalApplied Physics Letters
Volume60
Issue number5
DOIs
Publication statusPublished - Feb 1992

Keywords

  • annealing
  • capture
  • defect states
  • electron beams
  • interface states
  • oxidation
  • physical radiation effects
  • si junctions
  • silicon

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