Silicon oxidation by rapid thermal processing (RTP)

A.M. Hodge, C. Pickering, A.J. Pidduck, R.W. Hardeman

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Single crystal silicon wafers have been oxidised by exposure to an oxygen ambient at atmospheric pressure during RTP using an A G Associates Heatpulse 2101 Rapid Thermal Annealer. Wafers of the standard orientations used in silicon device processing <100>, <111> and <110> were studied. Oxidation was carried out in the temperature range 900 to 1250°C for times of RTP from 4 to 25U seconds producing oxides up to 60nm in thickness. Oxidation rates and their orientation and temperature dependence were derived from ellipsometric measurements of oxide thickness. X-ray photoelectron spectroscopy (XPS) and infra-red absorption spectrophotometry were also employed in the oxide characterisation. Preliminary electrical characterisation of the oxides, investigated using MOS C-V analyses, showed that the interface state densities were comparable to those in conventional furnace grown oxides.
Original languageEnglish
Title of host publicationRapid Thermal Processing
EditorsT.O. Sedgwick, T.E. Seidel, B-Y Tsaur
Pages313-319
Number of pages7
DOIs
Publication statusPublished - 1986

Keywords

  • semiconductor devices
  • mosfet
  • rapis thermal processing
  • thin oxide films
  • semiconducting silicon
  • semiconductor materials

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    Hodge, A. M., Pickering, C., Pidduck, A. J., & Hardeman, R. W. (1986). Silicon oxidation by rapid thermal processing (RTP). In T. O. Sedgwick, T. E. Seidel, & B-Y. Tsaur (Eds.), Rapid Thermal Processing (pp. 313-319) https://doi.org/10.1557/PROC-52-313