Silicon oxidation by rapid thermal processing (RTP)

A.M. Hodge, C. Pickering, A.J. Pidduck, R.W. Hardeman

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Single crystal silicon wafers have been oxidised by exposure to an oxygen ambient at atmospheric pressure during RTP using an A G Associates Heatpulse 2101 Rapid Thermal Annealer. Wafers of the standard orientations used in silicon device processing <100>, <111> and <110> were studied. Oxidation was carried out in the temperature range 900 to 1250°C for times of RTP from 4 to 25U seconds producing oxides up to 60nm in thickness. Oxidation rates and their orientation and temperature dependence were derived from ellipsometric measurements of oxide thickness. X-ray photoelectron spectroscopy (XPS) and infra-red absorption spectrophotometry were also employed in the oxide characterisation. Preliminary electrical characterisation of the oxides, investigated using MOS C-V analyses, showed that the interface state densities were comparable to those in conventional furnace grown oxides.
Original languageEnglish
Title of host publicationRapid Thermal Processing
EditorsT.O. Sedgwick, T.E. Seidel, B-Y Tsaur
Pages313-319
Number of pages7
DOIs
Publication statusPublished - 1986

Fingerprint

oxidation
oxides
silicon
wafers
spectrophotometry
infrared absorption
furnaces
atmospheric pressure
photoelectron spectroscopy
temperature dependence
single crystals
oxygen
x rays
temperature

Keywords

  • semiconductor devices
  • mosfet
  • rapis thermal processing
  • thin oxide films
  • semiconducting silicon
  • semiconductor materials

Cite this

Hodge, A. M., Pickering, C., Pidduck, A. J., & Hardeman, R. W. (1986). Silicon oxidation by rapid thermal processing (RTP). In T. O. Sedgwick, T. E. Seidel, & B-Y. Tsaur (Eds.), Rapid Thermal Processing (pp. 313-319) https://doi.org/10.1557/PROC-52-313
Hodge, A.M. ; Pickering, C. ; Pidduck, A.J. ; Hardeman, R.W. / Silicon oxidation by rapid thermal processing (RTP). Rapid Thermal Processing. editor / T.O. Sedgwick ; T.E. Seidel ; B-Y Tsaur. 1986. pp. 313-319
@inproceedings{0473908fd419412c9bacc81ce777253e,
title = "Silicon oxidation by rapid thermal processing (RTP)",
abstract = "Single crystal silicon wafers have been oxidised by exposure to an oxygen ambient at atmospheric pressure during RTP using an A G Associates Heatpulse 2101 Rapid Thermal Annealer. Wafers of the standard orientations used in silicon device processing <100>, <111> and <110> were studied. Oxidation was carried out in the temperature range 900 to 1250°C for times of RTP from 4 to 25U seconds producing oxides up to 60nm in thickness. Oxidation rates and their orientation and temperature dependence were derived from ellipsometric measurements of oxide thickness. X-ray photoelectron spectroscopy (XPS) and infra-red absorption spectrophotometry were also employed in the oxide characterisation. Preliminary electrical characterisation of the oxides, investigated using MOS C-V analyses, showed that the interface state densities were comparable to those in conventional furnace grown oxides.",
keywords = "semiconductor devices, mosfet, rapis thermal processing, thin oxide films, semiconducting silicon, semiconductor materials",
author = "A.M. Hodge and C. Pickering and A.J. Pidduck and R.W. Hardeman",
year = "1986",
doi = "10.1557/PROC-52-313",
language = "English",
isbn = "0931837170",
pages = "313--319",
editor = "T.O. Sedgwick and T.E. Seidel and Tsaur, {B-Y }",
booktitle = "Rapid Thermal Processing",

}

Hodge, AM, Pickering, C, Pidduck, AJ & Hardeman, RW 1986, Silicon oxidation by rapid thermal processing (RTP). in TO Sedgwick, TE Seidel & B-Y Tsaur (eds), Rapid Thermal Processing. pp. 313-319. https://doi.org/10.1557/PROC-52-313

Silicon oxidation by rapid thermal processing (RTP). / Hodge, A.M.; Pickering, C.; Pidduck, A.J.; Hardeman, R.W.

Rapid Thermal Processing. ed. / T.O. Sedgwick; T.E. Seidel; B-Y Tsaur. 1986. p. 313-319.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

TY - GEN

T1 - Silicon oxidation by rapid thermal processing (RTP)

AU - Hodge, A.M.

AU - Pickering, C.

AU - Pidduck, A.J.

AU - Hardeman, R.W.

PY - 1986

Y1 - 1986

N2 - Single crystal silicon wafers have been oxidised by exposure to an oxygen ambient at atmospheric pressure during RTP using an A G Associates Heatpulse 2101 Rapid Thermal Annealer. Wafers of the standard orientations used in silicon device processing <100>, <111> and <110> were studied. Oxidation was carried out in the temperature range 900 to 1250°C for times of RTP from 4 to 25U seconds producing oxides up to 60nm in thickness. Oxidation rates and their orientation and temperature dependence were derived from ellipsometric measurements of oxide thickness. X-ray photoelectron spectroscopy (XPS) and infra-red absorption spectrophotometry were also employed in the oxide characterisation. Preliminary electrical characterisation of the oxides, investigated using MOS C-V analyses, showed that the interface state densities were comparable to those in conventional furnace grown oxides.

AB - Single crystal silicon wafers have been oxidised by exposure to an oxygen ambient at atmospheric pressure during RTP using an A G Associates Heatpulse 2101 Rapid Thermal Annealer. Wafers of the standard orientations used in silicon device processing <100>, <111> and <110> were studied. Oxidation was carried out in the temperature range 900 to 1250°C for times of RTP from 4 to 25U seconds producing oxides up to 60nm in thickness. Oxidation rates and their orientation and temperature dependence were derived from ellipsometric measurements of oxide thickness. X-ray photoelectron spectroscopy (XPS) and infra-red absorption spectrophotometry were also employed in the oxide characterisation. Preliminary electrical characterisation of the oxides, investigated using MOS C-V analyses, showed that the interface state densities were comparable to those in conventional furnace grown oxides.

KW - semiconductor devices

KW - mosfet

KW - rapis thermal processing

KW - thin oxide films

KW - semiconducting silicon

KW - semiconductor materials

UR - https://www.scopus.com/record/display.url?eid=2-s2.0-0023014858&origin=resultslist&sort=plf-f&src=s&st1=Silicon+oxidation+by+rapid+thermal+processing&sid=ECCE2458C6A0BC0B63987D36D2ADE2CA.I0QkgbIjGqqLQ4Nw7dqZ4A%3a40&sot=b&sdt=b&sl=90&s=TITLE%28Silicon+oxidation+by+rapid+thermal+processing%29+AND+PUBYEAR+%3e+1984+AND+PUBYEAR+%3c+1987&relpos=0&relpos=0&citeCnt=1&searchTerm=TITLE%28Silicon+oxidation+by+rapid+thermal+processing%29+AND+PUBYEAR+%26gt%3B+1984+AND+PUBYEAR+%26lt%3B+1987

UR - http://journals.cambridge.org/action/displayAbstract?fromPage=online&aid=8167954

U2 - 10.1557/PROC-52-313

DO - 10.1557/PROC-52-313

M3 - Conference contribution

SN - 0931837170

SP - 313

EP - 319

BT - Rapid Thermal Processing

A2 - Sedgwick, T.O.

A2 - Seidel, T.E.

A2 - Tsaur, B-Y

ER -

Hodge AM, Pickering C, Pidduck AJ, Hardeman RW. Silicon oxidation by rapid thermal processing (RTP). In Sedgwick TO, Seidel TE, Tsaur B-Y, editors, Rapid Thermal Processing. 1986. p. 313-319 https://doi.org/10.1557/PROC-52-313