Spectrally-controlled, gain-switched operation of InGaN diode laser

Y. Hu*, M. Dubov, I. Khrushchev

*Corresponding author for this work

Research output: Contribution to journalArticle

Abstract

Self-seeded, gain-switched operation of an InGaN multi-quantum-well diode laser is reported for the first time. Narrow-line, wavelength-tunable, picosecond pulses have been generated from a standard, uncoated diode laser with an external feedback.

Original languageEnglish
Pages (from-to)702-703
Number of pages2
JournalElectronics letters
Volume40
Issue number11
DOIs
Publication statusPublished - 27 May 2004

Keywords

  • biochemical engineering
  • gallium nitride
  • infrared radiation
  • laser pulses
  • semiconductor lasers
  • semiconductor quantum wells
  • spectroscopic analysis
  • blazing
  • feedback signals
  • pulse duration
  • radio frequency

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