Spectrally-controlled, gain-switched operation of InGaN diode laser

Y. Hu; M. Dubov; I. Khrushchev

doi:10.1049/el:20040443

Spectrally-controlled, gain-switched operation of InGaN diode laser

Y. Hu^*
, M. Dubov
, I. Khrushchev

^*Corresponding author for this work

Aston Institute of Photonic Technologies (AiPT)

Aston University

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

Self-seeded, gain-switched operation of an InGaN multi-quantum-well diode laser is reported for the first time. Narrow-line, wavelength-tunable, picosecond pulses have been generated from a standard, uncoated diode laser with an external feedback.

Original language	English
Pages (from-to)	702-703
Number of pages	2
Journal	Electronics letters
Volume	40
Issue number	11
DOIs	https://doi.org/10.1049/el:20040443
Publication status	Published - 27 May 2004

Keywords

biochemical engineering
gallium nitride
infrared radiation
laser pulses
semiconductor lasers
semiconductor quantum wells
spectroscopic analysis
blazing
feedback signals
pulse duration
radio frequency

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10.1049/el:20040443

Cite this

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title = "Spectrally-controlled, gain-switched operation of InGaN diode laser",

abstract = "Self-seeded, gain-switched operation of an InGaN multi-quantum-well diode laser is reported for the first time. Narrow-line, wavelength-tunable, picosecond pulses have been generated from a standard, uncoated diode laser with an external feedback.",

keywords = "biochemical engineering, gallium nitride, infrared radiation, laser pulses, semiconductor lasers, semiconductor quantum wells, spectroscopic analysis, blazing, feedback signals, pulse duration, radio frequency",

author = "Y. Hu and M. Dubov and I. Khrushchev",

year = "2004",

month = may,

day = "27",

doi = "10.1049/el:20040443",

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pages = "702--703",

journal = "Electronics letters",

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T1 - Spectrally-controlled, gain-switched operation of InGaN diode laser

AU - Hu, Y.

AU - Dubov, M.

AU - Khrushchev, I.

PY - 2004/5/27

Y1 - 2004/5/27

N2 - Self-seeded, gain-switched operation of an InGaN multi-quantum-well diode laser is reported for the first time. Narrow-line, wavelength-tunable, picosecond pulses have been generated from a standard, uncoated diode laser with an external feedback.

AB - Self-seeded, gain-switched operation of an InGaN multi-quantum-well diode laser is reported for the first time. Narrow-line, wavelength-tunable, picosecond pulses have been generated from a standard, uncoated diode laser with an external feedback.

KW - biochemical engineering

KW - gallium nitride

KW - infrared radiation

KW - laser pulses

KW - semiconductor lasers

KW - semiconductor quantum wells

KW - spectroscopic analysis

KW - blazing

KW - feedback signals

KW - pulse duration

KW - radio frequency

UR - https://www.scopus.com/pages/publications/2942724464

UR - https://digital-library.theiet.org/content/journals/10.1049/el_20040443

U2 - 10.1049/el:20040443

DO - 10.1049/el:20040443

M3 - Article

SN - 0013-5194

VL - 40

SP - 702

EP - 703

JO - Electronics letters

JF - Electronics letters

IS - 11

ER -

Spectrally-controlled, gain-switched operation of InGaN diode laser

Abstract

Keywords

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