Spectrally controlled, picosecond pulse generation from an InGaN violet diode laser

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Self-seeded, gain-switched operation of an InGaN multi-quantum-well diode laser is reported for the first time. Narrow-line, wavelength-tunable, picosecond pulses have been generated from a standard, uncoated diode laser in an external cavity.
Original languageEnglish
Title of host publication2004 IEEE LEOS annual meeting conference proceedings
PublisherIEEE
Pages33-34
Number of pages2
Volume1
ISBN (Print)0-7803-8557-8
DOIs
Publication statusPublished - 1 Nov 2004
Event17th Annual Meeting of the IEEE Laser and Electro-Optics Society - Rio Grande, Puerto Rico
Duration: 7 Nov 200411 Nov 2004

Publication series

NameIEEE Lasers and Electro-Optics Society : annual meeting
ISSN (Print)1092-8081

Meeting

Meeting17th Annual Meeting of the IEEE Laser and Electro-Optics Society
Abbreviated titleLEOS 2004
CountryPuerto Rico
CityRio Grande
Period7/11/0411/11/04

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Hu, Y., & Khrushchev, I. (2004). Spectrally controlled, picosecond pulse generation from an InGaN violet diode laser. In 2004 IEEE LEOS annual meeting conference proceedings (Vol. 1, pp. 33-34). (IEEE Lasers and Electro-Optics Society : annual meeting). IEEE. https://doi.org/10.1109/LEOS.2004.1363096